There is provided a processing apparatus that polishes the back surface side of a wafer on which devices are formed on the front surface side. The processing apparatus includes a chuck table that holds the wafer and rotates and a polishing unit that forms scratches on the back surface side of the wafer while polishing the back surface side of the wafer. The processing apparatus includes also a scratch determining unit that determines whether or not the scratches exist on the back surface side of the wafer polished by the polishing unit and an informing unit that informs that a region in which the scratches do not exist is included in the wafer when a region for which it has been determined that the scratches do not exist by the scratch determining unit is included in the wafer.

A method of certifying uniform distribution of mechanical pressure comprises an apparatus for moving an object, the apparatus including an arm (410) with a joint (430) for adjusting a fixture (420) having a flat surface area (420a). The fixture includes vacuum suction for holding the object. The method further uses a pressure sensor (450) with a flat surface area (450a), displaying output voltage as a function of mechanical pressure applied. When the sensor is placed on a chuck with vacuum suction, the apparatus moves (460) to bring the flat fixture surface in touch with the flat sensor. Mechanical pressure is applied from the fixture to the sensor; the voltage output of the sensor is monitored to certify uniform distribution of the fixture pressure across the sensor area.

A manufacturing method for a substrate wafer, including: a wafer having a first and second main surface; forming a flattening resin layer on second main surface; with the flattening resin layer adsorbed and held as a reference surface, grinding or polishing first main surface as a first processing; removing flattening resin layer from the wafer; with the wafer's first main surface subjected to the first processing adsorbed and held, grinding or polishing second main surface as a second processing; with the second main surface subjected to second processing adsorbed and held, further grinding or polishing first main surface as a third processing; with first main surface subjected to third processing adsorbed and held, further grinding or polishing second main surface as a fourth processing to obtain a substrate wafer, wherein first processing and/or third processing is executed such that the wafer has a central concave or central convex thickness distribution.

A wafer production method includes forming, in an ingot, a separating layer that includes modified portions and cracks, by relatively moving the ingot and a focal point of a laser beam, with the focal point positioned at a depth corresponding to a thickness of the wafer, separating the wafer from the ingot by using the separating layer as a separation starting interface, bonding an adhesive tape to at least one of a separated surface of the wafer and a resulting fresh end surface of the ingot, removing separation debris stuck on the at least one surface, by separating the adhesive tape from the at least one surface, and grinding the at least one surface from which the separation debris has been removed. A wafer production machine is also disclosed.

In both a case where a workpiece is a regular workpiece having a first residual peeling layer on one surface thereof and a case where the workpiece is an adjustment workpiece not having the first residual peeling layer, a wafer having a predetermined thickness is manufactured by grinding opposite surfaces of the workpiece. That is, in the present invention, because the opposite surfaces of the workpiece are ground, wafers can be manufactured from two kinds of workpieces irrespective of whether or not the first residual peeling layer is present on the one surface of the workpiece. Hence, even when two kinds of workpieces are housed in a mixed manner in a first cassette, wafers having the predetermined thickness can be manufactured easily from these workpieces.

A wafer held on a delivery pad is lifted from a holding surface, and when a lower surface of the wafer has been spaced in its entirety from the holding surface, an air flow rate regulating valve is opened to eject air from the holding surface. As the distance between the holding surface and the wafer spaced from the holding surface increases by lifting of a delivery unit, the degree of opening of the air flow rate regulating valve is adjusted to increase a flow rate of air from the holding surface, thereby spacing the wafer from the holding surface in a short period of time without rupturing the wafer.

A wafer thinning system and method are disclosed that includes grinding away substrate material from a backside of a semiconductor device. A current change is detected in a grinding device responsive to exposure of a first set of device structures through the substrate material, where the grinding is stopped in response to the detected current change. Polishing repairs the surface and continues to remove an additional amount of the substrate material. Exposure of one or more additional sets of device structures through the substrate material is monitored to determine the additional amount of substrate material to remove, where the additional sets of device structures are located in the semiconductor device at a known depth different than the first set.

A workpiece to be ground by a grinding wheel of a grinding apparatus has a first layer including a first material and a second layer including a second material that is harder to grind than the first material and stacked on the first layer. The rotational speed of the grinding wheel for grinding the second layer, i.e., a second rotational speed, is lower than the rotational speed of the grinding wheel for grinding the first layer, i.e., a first rotational speed. The second layer can thus be ground effectively, as it is not necessary to use a grinding wheel with a high grinding capability or to lower a rate at which the workpiece is ground. Consequently, it is possible to maintain productivity for device chips manufactured by dividing the workpiece, and also prevent the footprint of the grinding apparatus from increasing.

A grinding method for grinding a plurality of platelike workpieces at a time is provided. The workpieces are attached to a support member and held on a chuck table. A grinding wheel is brought into contact with the workpieces to grind the workpieces at a time. The grinding wheel includes a disk-shaped wheel base having a first surface, a plurality of first abrasive members arranged annularly on the first surface of the wheel base, and a plurality of second abrasive members arranged annularly on the first surface of the wheel base radially inside the first abrasive members in a concentric relationship with the first abrasive members. The radial spacing between the first abrasive members and the second abrasive members is set larger than the minimum spacing between any adjacent ones of the workpieces.

A wafer held on a delivery pad is lifted from a holding surface, and when a lower surface of the wafer has been spaced in its entirety from the holding surface, an air flow rate regulating valve is opened to eject air from the holding surface. As the distance between the holding surface and the wafer spaced from the holding surface increases by lifting of a delivery unit, the degree of opening of the air flow rate regulating valve is adjusted to increase a flow rate of air from the holding surface, thereby spacing the wafer from the holding surface in a short period of time without rupturing the wafer.