A display device including a substrate including: a top surface, a bottom surface, and a plurality of side surfaces connecting the top surface and the bottom surface; a signal line disposed on the top surface; a sidewall electrode in electrical contact with the signal line and disposed on a first side surface of the side surfaces; and a connection electrode in electrical contact with the sidewall electrode and disposed on the first side surface.

A silicon carbide single crystal substrate includes a first main surface, a second main surface, and a circumferential edge portion. The second main surface is opposite to the first main surface. The circumferential edge portion connects the first main surface and the second main surface. The circumferential edge portion has a linear orientation flat portion, a first arc portion having a first radius, and a second arc portion connecting the orientation flat portion and the first arc portion and having a second radius smaller than the first radius, when viewed along a direction perpendicular to the first main surface.

The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

A wafer processing method for processing a wafer includes an annular groove forming step, a close contact making step, a protective member fixing step, a grinding step, and a peeling step. The wafer has a device area and a peripheral marginal area surrounding the device area on the front side, and devices each having asperities are formed in the device area. In the annular groove forming step, an annular groove is formed on the front side of the wafer along the inner circumference of the peripheral marginal area. In the close contact making step, the device area and the annular groove are covered with a protective film, and the protective film is bring into close contact with the front side of the wafer.

An LED wafer processing method includes a dividing step of rotatably mounting a first cutting blade having a first width in a first cutting unit, holding an LED wafer on a holding table, and then relatively moving the first cutting unit and the holding table to cut the wafer along each division line formed on the wafer, thereby forming a full-cut groove along each division line to thereby divide the wafer into individual chips. The method further includes rotatably mounting a second cutting blade having a second width larger than the first width in a second cutting unit after performing the dividing step, and then relatively moving the second cutting unit and the holding table to thereby polish the opposed side surfaces of the full-cut groove formed along each division line, whereby a polished groove larger in width than the full-cut groove is formed along each full-cut groove.

The invention aims for a wafer edge trimming method 1 adhered on a support wafer 2 by way of an interface layer 3. A zone at the perimeter 12 of the wafer 1 is trimmed by grinding. The stopping of the grinding is advantageously done at the level of the interface layer 3. To do this, an interface layer 3 comprising a transition layer 4 having a resistance to grinding greater than that of the wafer 1 is used. According to a possibility, detecting an increase of the resistance to grinding during the grinding is done, so as to stop the grinding.

A substrate processing method which can clean a peripheral portion of a substrate after polishing and can check the cleaning effect of the peripheral portion of the substrate is disclosed. The substrate processing method includes polishing a peripheral portion of the substrate by pressing a polishing tape having abrasive grains against the peripheral portion of the substrate with a first head, cleaning the peripheral portion of the substrate by supplying a cleaning liquid to the peripheral portion of the substrate after polishing, bringing a tape having no abrasive grains into contact with the peripheral portion of the substrate after cleaning by a second head, applying light to the tape and receiving reflected light from the tape by a sensor, and judging that the peripheral portion of the substrate is contaminated when an intensity of the received reflected light is lower than a predetermined value.

A method evaluates an edge shape of a silicon wafer, in which as shape parameters in a wafer cross section, when defining a radial direction reference L1, a radial direction reference L2, an intersection point P1, a height reference plane L3, h1 [m], h2 [m], a point Px3, a straight line Lx, an angle x, a point Px0, [m], a point Px1, and a radius Rx [m], the edge shape of the silicon wafer is measured, values of the shape parameters h1, h2, and are set, the shape parameters Rx and x are calculated in accordance with the definition based on measurement data of the edge shape, and the edge shape of the silicon wafer is determined from the calculated Rx and x to be evaluated. Consequently, a method evaluates an edge shape of a silicon wafer capable of preventing an occurrence of trouble.

A grinding wheel includes a plurality of wheel tips. The plurality of wheel tips include a plurality of diamond abrasive grains and a bonding material mixed with the diamond abrasive grains. The plurality of diamond abrasive grains have a ratio of a length in a long axis direction to a width in a short axis direction of 1:2.5 to 1:3.5 and includes edges or vertices having a grinding angle of 90 or less.

A processing method for a wafer having a chamfered portion on an outer circumference thereof includes a step of irradiating a laser beam of a transmission wavelength to the wafer along an outer circumferential edge of the wafer at a position on an inner side of a predetermined distance from the outer circumferential edge of the wafer to form an annular modified region having a depth from a front face of the wafer to a finish thickness, a step of irradiating a laser beam of a transmission wavelength to the wafer on an outer circumferential portion of the wafer to radially form a plurality of modified regions having the depth from the front face of the wafer to the finish thickness on the outer circumferential portion of the wafer, and a step of grinding a back face of the wafer to thin the wafer to the finish thickness.