Patent classifications
B24B9/065
POLISHING APPARATUS AND POLISHING METHOD FOR POLISHING A PERIPHERY OF A SUBSTRATE
A polishing apparatus capable of accurately detecting a polishing end point of a periphery of a substrate, such as a wafer, is disclosed. The polishing apparatus includes a polishing head configured to press a polishing tool against the periphery of the substrate on a substrate holding surface. The polishing head includes a pressing member configured to press the polishing tool against the periphery of the substrate, and a shear-force detection sensor configured to detect a shear force acting on the pressing member and output an index value indicating a magnitude of the shear force. An operation controller has a memory storing a program configured to determine a polishing end point at which the index value reaches a threshold value, and a processer configured to execute the program.
POLISHING APPARATUS AND POLISHING METHOD
A polishing apparatus capable of forming a step-shaped recess having a right-angled cross section in an edge portion of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a substrate rotating device configured to rotate the substrate about a rotation axis; a first roller having a first circumferential surface configured to press a polishing tape against the edge portion of the substrate; and a second roller having a second circumferential surface in contact with the first circumferential surface. The second roller has a tape stopper surface that restricts movement of the polishing tape in a direction away from the rotation axis. The tape stopper surface is located radially outward of the first circumferential surface.
LED WAFER PROCESSING METHOD
An LED wafer processing method includes a dividing step of rotatably mounting a first cutting blade having a first width in a first cutting unit, holding an LED wafer on a holding table, and then relatively moving the first cutting unit and the holding table to cut the wafer along each division line formed on the wafer, thereby forming a full-cut groove along each division line to thereby divide the wafer into individual chips. The method further includes rotatably mounting a second cutting blade having a second width larger than the first width in a second cutting unit after performing the dividing step, and then relatively moving the second cutting unit and the holding table to thereby polish the opposed side surfaces of the full-cut groove formed along each division line, whereby a polished groove larger in width than the full-cut groove is formed along each full-cut groove.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A display device including a substrate including: a top surface, a bottom surface, and a plurality of side surfaces connecting the top surface and the bottom surface; a signal line disposed on the top surface; a sidewall electrode in electrical contact with the signal line and disposed on a first side surface of the side surfaces; and a connection electrode in electrical contact with the sidewall electrode and disposed on the first side surface.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.
SUBSTRATE PROCESSING METHOD
A substrate processing method capable of preventing an adherence of a foreign matter to a substrate is disclosed. The substrate processing method comprises: a substrate rotating step of rotating a substrate W while holding the substrate W; a first-liquid upper supply step of supplying a first liquid onto an upper surface of the substrate W while rotating the substrate W; a polishing step of pressing a polishing tape 23 to the substrate W while supplying the first liquid in a state of rotating the substrate W; a second-liquid upper supply step of supplying a second liquid onto the upper surface of the substrate W while rotating the substrate W; and a cleaning step of pressing a cleaning tape 29 to the substrate W while supplying the second liquid in a state of rotating the substrate W and terminating after the polishing step is terminated. The second liquid is either of a conducting water, a surfactant solution, or ozone water.
Wafer grinding wheel
A grinding wheel includes a plurality of wheel tips. The plurality of wheel tips include a plurality of diamond abrasive grains and a bonding material mixed with the diamond abrasive grains. The plurality of diamond abrasive grains have a ratio of a length in a long axis direction to a width in a short axis direction of 1:2.5 to 1:3.5 and includes edges or vertices having a grinding angle of 90? or less.
Substrate processing apparatus and substrate processing method
Polishing uniformity of a surface to be polished of a substrate is improved by appropriately according with a state of the surface to be polished during polishing. A substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, an elevating mechanism for elevating the pad holder 226 with respect to the substrate WF, a swing mechanism for swinging the pad holder 226 in a radial direction of the substrate WF, supporting members 300A and 300B for supporting the polishing pad 222 swung to outside the table 100 by the swing mechanism, and driving mechanisms 310 and 320 for adjusting at least one of a height and a distance to the substrate WF of the supporting member 300 while polishing the substrate WF.
Rectangular substrate for imprint lithography and making method
A rectangular substrate is prepared by providing a starting rectangular substrate having front and back surfaces and four side surfaces as ground, and pressing a rotary polishing pad perpendicularly against one side surface under a constant pressure, and relatively moving the rotary polishing pad and the substrate parallel to the side surface, for thereby polishing the side surface of the substrate. In the imprint lithography, the rectangular substrate is capable of controlling compression and pattern shape at a high accuracy and thus transferring a complex pattern of fine feature size to a recipient.
APPARATUS FOR FILM REMOVAL
An apparatus for separating a first liner from a lens wafer includes: at least one air nozzle including a first open end facing an edge of the lens wafer and configured to eject a gas, the at least one air nozzle disposed proximal to a first lens wafer holder configured to hold the lens wafer having the first liner attached to a first surface of the lens wafer, a first peeling device including a second lens wafer holder configured to hold the lens wafer, a first auxiliary air nozzle facing the lens wafer and including a first opening configured to eject a gas, and a first at least one suction cup configured to contact the first liner on the first surface of the lens wafer and form a vacuum seal with the first liner, each suction cup of the first at least one suction cup being retractable in a direction away from the lens wafer.