A method for double-side polishing a wafer uses a double-side polishing machine wherein a carrier which is yet to be arranged in the double-side polishing machine is previously subjected to two-stage double-side polishing which uses a double-side polishing machine different from the double-side polishing machine adopted for double-side polishing the wafer and includes primary polishing using slurry containing abrasive grains and secondary polishing using an inorganic alkali solution containing no abrasive grain, the carrier subjected to the two-stage double-side polishing is arranged in the double-side polishing machine adopted for double-side polishing the wafer, and the double-side polishing of the wafer is performed. Consequently, the method for double-side polishing a wafer enables suppressing damages to wafers to be polished immediately after arranging the carrier between the upper and lower turntables.

A polishing apparatus includes a polishing unit having a spindle having an axial bore defined therein, a housing by which the spindle is rotatably supported, a polishing pad mounted on an end of the spindle and having an opening defined therein that is held in fluid communication with the axial bore, a slurry supply pipe inserted in the axial bore in the spindle and having a supply port supplying a slurry to the workpiece held on the chuck table and an inlet port remote from the supply port, introducing the slurry into the slurry supply pipe, a slurry introducing unit connected to the inlet port of the slurry supply pipe, introducing the slurry into the inlet port, and a cleaning water introducing unit connected to the inlet port of the slurry supply pipe, introducing cleaning water into the inlet port.

There are provided a chemical mechanical polishing composition, a chemical mechanical polishing slurry and a method for polishing a substrate that can realize a polishing rate equivalent to or higher than that of the existing polishing agent even if total metal content is decreased, or can realize remarkably higher polishing rate than that of the existing polishing agent when using total metal content identical as before. The chemical mechanical polishing composition comprises an iron-based metal catalyst, and a magnesium-based metal catalyst, wherein the metal content of the iron-based metal catalyst is equal to or greater than the metal content of the magnesium-based metal catalyst.

The invention provides a polymer-polymer composite polishing method comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. The method includes attaching a polymer-polymer composite having a polishing layer and a polymeric matrix. The polymer matrix has fluoropolymer particles embedded in the polymeric matrix. Then a cationic particle slurry is applied to the polymer-polymer composite polishing pad. Conditioning the polymer-polymer composite polishing pad with an abrasive cuts the polymer-polymer composite polishing pad; and rubbing the cut polymer-polymer composite polishing pad against the substrate forms the polishing surface. The polishing surface has a fluorine concentration measured in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with at a penetration depth of 1 to 10 μm to polish or planarize the substrate.

A process for chemical mechanical polishing a substrate containing cobalt, zirconium oxide, poly-silicon and silicon dioxide, wherein the cobalt, zirconium, and poly-silicon removal rates are selective over silicon dioxide. The chemical mechanical polishing composition includes water, a benzyltrialkyl quaternary ammonium compound, cobalt chelating agent, corrosion inhibitor, colloidal silica abrasive, optionally a biocide and optionally a pH adjusting agent, and a pH greater than 7, and the chemical mechanical polishing compositions are free of oxidizing agents.

A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

Exemplary substrate electrochemical planarization apparatuses may include a chuck body defining a substrate support surface. The apparatuses may include a retaining wall extending from the chuck body. The apparatuses may include an electrolyte delivery port disposed radially inward of the retaining wall. The apparatuses may include a spindle that is positionable over the chuck body. The apparatuses may include an end effector coupled with a lower end of the spindle. The end effector may be conductive. The apparatuses may include an electric contact extending from the chuck body or retaining wall. The apparatuses may include a current source. The current source may be configured to provide an electric current to an electrolyte within an open interior defined by the retaining wall.

A chemical mechanical polishing composition for polishing a silicon wafer comprises, consists essentially of, or consists of a water based liquid carrier, colloidal silica particles dispersed in the liquid carrier, about 0.01 weight percent to about 2 weight percent of a dipolar aprotic solvent at point of use, and a pH in a range from about 8 to about 12. A method for polishing a silicon wafer may include contacting the wafer with the above described polishing composition, moving the polishing composition relative to the wafer, and abrading the wafer to remove silicon from the wafer and thereby polish the wafer.

A device includes a rotator assembly configured to control a rotational kinetic energy of a wafer-platen based on an electrical energy input. The device further includes a controller configured to control the rotational kinetic energy of the wafer-platen, wherein a rotational velocity of the wafer-platen is either increased or decreased. The device further includes a converter configured to generate an electrical energy output of the rotator assembly based on decreased rotational kinetic energy of the wafer-platen. The device further includes an energy storage device configured to store the electrical energy outputted by the rotator assembly based on the decreased rotational kinetic energy of the wafer-platen.

The present disclosure relates to aqueous polishing vehicles and polishing compositions, where the polishing compositions comprise suspended abrasive particles. More particularly, the polishing vehicles and polishing compositions have tunable viscosity, shear stability, and resistance to hard packing and thus can continuously suspend abrasive particles.