Provided is a polishing pad including a polishing surface having a zeta potential of +0.1 mV or more at a pH of 10.0. Preferably, a polishing pad including a polyurethane having a tertiary amine is provided. Further preferably, the polyurethane having a tertiary amine is a reaction product of a polyurethane reaction raw material containing at least a chain extender having a tertiary amine. A polishing method using the polishing pads is also provided, wherein the method is performed while supplying an alkaline polishing slurry.

A method of CMP includes providing a slurry solution including ≥1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ≥1 buffering agent which provides a buffering ratio ≥1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness <300 Kg/mm.sup.2 or Mohs Hardness <4. The slurry solution is dispensed on a hard surface having a Vickers hardness >1,000 kg/mm.sup.2 is pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface.

A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid comprising abrasive grains; a polymer having a cationic group at the terminal; an oxidizing agent; a metal oxide-dissolving agent; and water, in which the polymer has a structural unit derived from an unsaturated carboxylic acid, a weight average molecular weight of the polymer is 20000 or less, and a pH is less than 5.0.

A polishing liquid for polishing a glass substrate includes cerium oxide as polishing abrasive particles, and a substance that reduces cerium oxide in response to irradiation of light.

The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

Provided is a polishing means that can improve the flatness of a substrate without significantly reducing the polishing speed. More specifically, provided is a polishing composition comprising inorganic particles, water, and a water-soluble polymer, wherein (i) a 1 mass (wt/wt) % aqueous solution of the water-soluble polymer has a normal stress (N) of 1 or more at a shear rate of 10000 (1/S), or (ii) a 0.25 mass (wt/wt) % aqueous solution of the water-soluble polymer has a normal stress (N) of 1 or more at a shear rate of 10000 (1/S).

A substrate polishing method includes a stock polishing step comprising a plurality of stock polishing sub-steps in which a first polishing solution, a second polishing solution, and a third polishing solution are applied, in that order, to a substrate. A content COM.sub.P1 of water-soluble polymer P.sub.1 in the first polishing solution, a content COM.sub.P2 of water-soluble polymer P.sub.2 in the second polishing solution, and a content COM.sub.P3 of water-soluble polymer P.sub.3 in the third polishing solution satisfy COM.sub.P1<COM.sub.P2<COM.sub.P3, and any one of the following conditions is satisfied: (1) average primary particle diameter D.sub.A3 of abrasive A.sub.3 in the third polishing solution is smaller than average primary particle diameter D.sub.A1 of abrasive A.sub.1 in the first polishing solution and average primary particle diameter D.sub.A2 of abrasive A.sub.2 in the second polishing solution; and (2) the third polishing solution does not contain abrasive A.sub.3.

A polishing composition according to the present invention includes: silica; an anionic water-soluble polymer; at least one compound selected from the group consisting of a phosphonate group-containing compound, a phosphate group-containing compound, and an amino group-containing compound; and a dispersing medium.