A coating composition suitable for providing a hardcoat comprising a topcoat and an epoxy modified adhesion promoter. The epoxy modified adhesion promoter comprises, in one embodiment, a molecule with the formula (1):

U-Q-R.sup.1—SiR.sup.2.sub.gR.sup.3.sub.(3-g)   (1)

wherein Q is —CH.sub.2CH(OH)CH.sub.2—O— or —CH.sub.2CH(OH)CH.sub.2—NR.sup.4—; U is: —O—(C.sub.6H.sub.hR.sup.2.sub.(4-h)—CR.sup.5—C.sub.6H.sub.hR.sup.2.sub.(4-b)—O—H.sub.2CH(OH)CH.sub.2—O).sub.i—C.sub.6H.sub.hR.sup.2.sub.(4-h)—CR.sup.5—C.sub.6H.sub.hR.sup.2.sub.(4-h)—O-J; where R.sup.2 is chosen from a C1-C10 alkyl or a substituted or unsubstituted phenyl group; R.sup.3 is chosen from an alkoxy, an acetoxy, or a ketoxime radical; R.sup.1 is a C1-C4 alkylene; g is 0-2; h is 0-4; R.sup.4 is hydrogen or —CH.sub.2CH(OH)CH.sub.2—U—; R.sup.5 is hydrogen or an alkyl; i is 0-100; and J is H, Q-R.sup.1SiR.sup.2.sub.hR.sup.3.sub.(3-h), or formula (2). The coating composition is suitable for application to a substrate without the use of a primer.

The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 Daltons to about 5000 Daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrates contain silicon oxide.

A polishing pad includes a pad layer and one or more polishing structures over an upper surface of the pad layer, where each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, where the one or more polishing structures comprise at least one continuous line shaped segment extending along the upper surface of the pad layer, where each of the one or more polishing structures is a homogeneous material.

To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica.

Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein

the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.

Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise α-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0<x<3.0, 1.33<y<4.0), low-k, and ultra low-k films.

A polishing system performs chemical-mechanical polishing of an object to be polished using an abrasive slurry. The polishing system includes a polishing amount calculator that measures an amount of free metal ions of a metallic element derived from the object to be polished in a processed slurry and calculates a polishing amount of the object to be polished from the amount of the free metal ions. The object to be polished is a glass containing the metallic element of Group 1 or Group 2 of a periodic table.

Provided is a polishing composition that is produced at low cost and can impart high-grade mirror finishing to ceramic. The polishing composition includes abrasives made of carbide, and is used for polishing ceramic.

A chemical mechanical polishing apparatus, includes: a platen having a polishing pad attached to an upper surface thereof, and rotatably installed in one direction by a driving means, a slurry supply unit supplying a slurry including an abrasive and an additive having a zeta potential of a first polarity to the polishing pad, an electrode disposed below the polishing pad, a power supply unit applying a voltage including a DC pulse of a second polarity, opposite to the first polarity, to the electrode, and a polishing head installed on the polishing pad, and rotating a semiconductor substrate in contact with the polishing pad.

Slurry compositions for chemical mechanical polishing, chemical mechanical polishing apparatuses using the same, and methods for fabricating a semiconductor device using the same are provided. The slurry composition for chemical mechanical polishing may include polishing particles in an amount of 0.1% to 10% by weight of the slurry composition, an oxidant in an amount of 0.1% to 5% by weight of the slurry composition, a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition. The thermo-sensitive agent may include metal nanoparticles or metal oxide nanoparticles, and water, wherein the slurry composition has a pH of 1 to 8.

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.