A processing apparatus used in processing a workpiece having a device in each of a plurality of regions that includes a chuck table holding the workpiece, positioning means positioning the workpiece before grinding, resin coating means including a rotatable spinner table for coating the workpiece with a resin, cleaning means, a grinding unit, and a transfer unit. The transfer unit includes a first transfer unit transferring the workpiece from the positioning means to the spinner table and from the spinner table to the chuck table, a second transfer unit transferring the workpiece from the chuck table to the cleaning means, and a front/back surface inversion transfer unit taking over the workpiece from the cleaning means to the second transfer unit.

A method grinds a semiconductor wafer by treating the semiconductor wafer so as to remove material by way of a grinding tool containing grinding teeth having a height h, with a coolant being supplied into a contact region between the semiconductor wafer and the grinding tool, in which, at any time of the grinding, a flushing fluid is applied onto a region on one side of the semiconductor wafer by way of a nozzle.

In a double-side polishing apparatus includes at least one work thickness measuring instrument in real time during double-side polishing of the work; an inner circumferential surface defined by the through hole in said one of the upper plate and the lower plate is provided with a metal cylindrical member; and either of: a lower window provided in a lower part of the cylindrical member provided in the upper plate and an upper window provided in an upper part of the cylindrical member provided to cover the upper side of the through hole provided in the upper plate, or an upper window provided in an upper part of the cylindrical member provided in the lower plate and a lower window provided to cover the lower side of the through hole provided in the lower plate.—

In a double-side polishing apparatus includes at least one work thickness measuring instrument in real time during double-side polishing of the work; an inner circumferential surface defined by the through hole in said one of the upper plate and the lower plate is provided with a metal cylindrical member; and either of: a lower window provided in a lower part of the cylindrical member provided in the upper plate and an upper window provided in an upper part of the cylindrical member provided to cover the upper side of the through hole provided in the upper plate, or an upper window provided in an upper part of the cylindrical member provided in the lower plate and a lower window provided to cover the lower side of the through hole provided in the lower plate.—

Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry P.sub.F to the silicon substrate. The total amount of the final stock polishing slurry P.sub.F supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 μg or less.

Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry P.sub.F to the silicon substrate. The total amount of the final stock polishing slurry P.sub.F supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 μg or less.

Provided is a method of double-side polishing a wafer by which variations of the GBIR values of polished wafers between batches can be reduced. In the method of double-side polishing a wafer, a current batch includes measuring the center thickness of the wafer before polishing (S100); setting a target GBIR value within a predetermined range (S110); calculating a polishing time of the current batch based on Formula (1) (S120); and polishing both surfaces of the wafer for the calculated polishing time (S130).
Polishing time of current batch=polishing time of previous batch+A.sub.1×(center thickness of wafer before polishing in previous batch−center thickness of wafer before polishing in current batch)+A.sub.2×(GBIR value of wafer after polishing in previous batch−target GBIR value)+A.sub.3  (1), where A.sub.1, A.sub.2, and A.sub.3 are predetermined coefficients.

Provided is a method of double-side polishing a wafer by which variations of the GBIR values of polished wafers between batches can be reduced. In the method of double-side polishing a wafer, a current batch includes measuring the center thickness of the wafer before polishing (S100); setting a target GBIR value within a predetermined range (S110); calculating a polishing time of the current batch based on Formula (1) (S120); and polishing both surfaces of the wafer for the calculated polishing time (S130).
Polishing time of current batch=polishing time of previous batch+A.sub.1×(center thickness of wafer before polishing in previous batch−center thickness of wafer before polishing in current batch)+A.sub.2×(GBIR value of wafer after polishing in previous batch−target GBIR value)+A.sub.3  (1), where A.sub.1, A.sub.2, and A.sub.3 are predetermined coefficients.

A method of manufacturing a SiC substrate includes grinding a sliced SiC substrate on a side of its front surface on which a Si-face is exposed, grinding the sliced SiC substrate on a side of its back surface on which a C-face is exposed, such that the back surface has an arithmetic mean height Sa of 1 nm or less, and then polishing the sliced SiC substrate on the side of only the front surface and not on the side of the back surface. In a case where the side of the back surface is ground as described above, the SiC substrate can be prevented from being warped even if the side of the back surface is not polished. This can shorten the manufacturing lead time for the SiC substrate used for the manufacture of power devices or the like and can also reduce the manufacturing cost.

The sum of torques: the torque of the sun gear and the torque of the internal gear, and the ratio of the torques are controlled within predetermined ranges.