A machining apparatus for a workpieces includes an upper turn table support mechanism supporting an upper turn table from above to be vertically movable by a cylinder extending along a rotational axis direction of the table, a horizontal plate fixed to the cylinder so that a main surface thereof becomes perpendicular to a longitudinal axis of the cylinder, at least three displacement sensors which measure horizontal plate surface height positions when the upper turn table has moved down to a fixed position, and a control apparatus to calculate a relative upper turn table height position and an angle formed between the upper turn table rotational axis and the cylinder longitudinal axis from the horizontal plate surface height positions measured by the displacement sensors. A workpiece holding abnormality can be accurately and quickly detected before machining the workpiece to avoid damage, and an cylinder eccentric angle can be detected during machining.

Apparatuses and methods for performing a post-CMP cleaning are provided. The apparatus includes a chamber configured to receive a wafer in need of having CMP residue removed. The apparatus also includes a spray unit configured to apply a first cleaning solution to at least one surface of the wafer. The apparatus further includes a brush cleaner configured to scrub the at least one surface of the wafer. In addition, the apparatus includes at least one inner tank disposed in the chamber for storing a second cleaning solution that is used to clean the brush cleaner.

Apparatuses and methods for performing a post-CMP cleaning are provided. The apparatus includes a chamber configured to receive a wafer in need of having CMP residue removed. The apparatus also includes a spray unit configured to apply a first cleaning solution to at least one surface of the wafer. The apparatus further includes a brush cleaner configured to scrub the at least one surface of the wafer. In addition, the apparatus includes at least one inner tank disposed in the chamber for storing a second cleaning solution that is used to clean the brush cleaner.

A double-side polishing method, including: simultaneously polishing both surfaces of a semiconductor wafer by holding the semiconductor wafer in a carrier, interposing the held semiconductor wafer between an upper turn table and a lower turn table each having a polishing pad attached thereto, and bringing both surfaces of the semiconductor wafer into sliding contact with the polishing pads, wherein the semiconductor wafer is polished under a condition that a thickness A (mm) of the polishing pad attached to the upper turn table and a thickness B (mm) of the polishing pad attached to the lower turn table satisfy relations of 1.0A+B2.0 and A/B>1.0. This provides a double-side polishing method capable of obtaining a semiconductor wafer in which F-ZDD<0 while controlling the GBIR value to be equal to or smaller than a required value.

A double-side polishing method, including: simultaneously polishing both surfaces of a semiconductor wafer by holding the semiconductor wafer in a carrier, interposing the held semiconductor wafer between an upper turn table and a lower turn table each having a polishing pad attached thereto, and bringing both surfaces of the semiconductor wafer into sliding contact with the polishing pads, wherein the semiconductor wafer is polished under a condition that a thickness A (mm) of the polishing pad attached to the upper turn table and a thickness B (mm) of the polishing pad attached to the lower turn table satisfy relations of 1.0A+B2.0 and A/B>1.0. This provides a double-side polishing method capable of obtaining a semiconductor wafer in which F-ZDD<0 while controlling the GBIR value to be equal to or smaller than a required value.

Based on the relational data that indicates the relationship between inter-plate distance, which is a distance between the upper plate and the lower plate at two or more positions where distances from the center of the rotating plate are different, and the flatness of the work, the optimal value of the inter-plate distance is calculated.

Based on the relational data that indicates the relationship between inter-plate distance, which is a distance between the upper plate and the lower plate at two or more positions where distances from the center of the rotating plate are different, and the flatness of the work, the optimal value of the inter-plate distance is calculated.

Provided is a double-side polishing apparatus for workpieces capable of terminating double-side polishing at the timing when the entire workpiece and the peripheral portion of the workpiece each have the target shape. A computing section: obtains, from thickness data of each workpiece measured by a workpiece thickness measuring device a shape index of the entire workpiece; and determines, as a timing of terminating double-side polishing, a timing at which the shape index of the entire workpiece is a set value of the shape index determined based on a difference between a target value of the shape index in a current batch and an actual value of the shape index in a preceding batch and a deviation of an actual value of a shape index of a peripheral portion of the workpiece in the preceding batch from a target range of the shape index in the current batch.

Provided is a double-side polishing apparatus for workpieces capable of terminating double-side polishing at the timing when the entire workpiece and the peripheral portion of the workpiece each have the target shape. A computing section: obtains, from thickness data of each workpiece measured by a workpiece thickness measuring device a shape index of the entire workpiece; and determines, as a timing of terminating double-side polishing, a timing at which the shape index of the entire workpiece is a set value of the shape index determined based on a difference between a target value of the shape index in a current batch and an actual value of the shape index in a preceding batch and a deviation of an actual value of a shape index of a peripheral portion of the workpiece in the preceding batch from a target range of the shape index in the current batch.

A sizing device in a polishing apparatus for measuring a thickness of a wafer in course of polishing by laser beam interference, includes: a light-source for irradiating the wafer in course of polishing with a laser beam, a light-receiving portion for receiving reflected light from the wafer in course of polishing irradiated with the laser beam from the light-source, a calculating part for calculating a measured value of the thickness of the wafer in course of polishing irradiated with the laser beam based on the reflected light received through the light-receiving portion. The calculating part can calculate the wafer thickness in course of polishing by calculating a measuring error value of the wafer thickness in course of polishing from resistivity of the wafer in course of polishing based on a previously determined correlation between wafer resistivity and measuring error value of wafer thickness, and by compensating the measuring error value.