A double-disc straight groove cylindrical-component surface grinding disc, includes a first grinding disc and a second grinding disc, rotating relative to each other; the the first grinding disc's working face is planar; the second grinding disc's surface, opposite the first grinding disc, includes a set of radial straight grooves, with groove faces of the straight grooves are the working face of the second grinding disc; the cross-sectional outline of the working face of the second grinding disc is arcuate or V-shaped or is a V-shape having an arc; during grinding, a workpiece spins inside the straight grooves, while under the effect of an advancing apparatus, the workpiece slides in translational motion along the straight grooves. The described grinding disc device has high-volume production capabilities, and the shape accuracy and size consistency of the cylindrical roller's cylindrical surface and the efficiency in machining are improved, and machining cost is reduced.

A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained by slicing a silicon ingot, slicing strain removing step of removing strain on a surface caused by slicing, etching step of removing strain caused by the slicing strain removing step, and double-side polishing step of performing mirror polishing on both surfaces of the silicon wafers subjected to etching, each step being performed by batch processing, wherein silicon wafers which are processed in double-side polishing step by batch processing are selected from silicon wafers processed in same batch in the slicing strain removing step and the number of silicon wafers to be selected is made to be equal to the number of silicon wafers processed in the slicing strain removing step or submultiple thereof. As a result, a method that can produce mirror-polished wafers having high flatness is provided.

A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained by slicing a silicon ingot, slicing strain removing step of removing strain on a surface caused by slicing, etching step of removing strain caused by the slicing strain removing step, and double-side polishing step of performing mirror polishing on both surfaces of the silicon wafers subjected to etching, each step being performed by batch processing, wherein silicon wafers which are processed in double-side polishing step by batch processing are selected from silicon wafers processed in same batch in the slicing strain removing step and the number of silicon wafers to be selected is made to be equal to the number of silicon wafers processed in the slicing strain removing step or submultiple thereof. As a result, a method that can produce mirror-polished wafers having high flatness is provided.

A wafer polishing apparatus includes a lower surface plate, an upper surface plate disposed over the lower surface plate, a carrier disposed between the lower surface plate and the upper surface plate and containing a wafer, and a lift unit lifting the carrier such that an upper surface of the carrier contacts a lower surface of the upper surface plate or lowering the carrier such that a lower surface of the carrier contacts an upper surface of the lower surface plate.

A wafer polishing apparatus includes a lower surface plate, an upper surface plate disposed over the lower surface plate, a carrier disposed between the lower surface plate and the upper surface plate and containing a wafer, and a lift unit lifting the carrier such that an upper surface of the carrier contacts a lower surface of the upper surface plate or lowering the carrier such that a lower surface of the carrier contacts an upper surface of the lower surface plate.

A double-disc straight groove cylindrical-component surface grinding disc, includes a first grinding disc and a second grinding disc, rotating relative to each other; the the first grinding disc's working face is planar; the second grinding disc's surface, opposite the first grinding disc, includes a set of radial straight grooves, with groove faces of the straight grooves are the working face of the second grinding disc; the cross-sectional outline of the working face of the second grinding disc is arcuate or V-shaped or is a V-shape having an arc; during grinding, a workpiece spins inside the straight grooves, while under the effect of an advancing apparatus, the workpiece slides in translational motion along the straight grooves. The described grinding disc device has high-volume production capabilities, and the shape accuracy and size consistency of the cylindrical roller's cylindrical surface and the efficiency in machining are improved, and machining cost is reduced.

A double-disc straight groove cylindrical-component surface grinding disc, includes a first grinding disc and a second grinding disc, rotating relative to each other; the the first grinding disc's working face is planar; the second grinding disc's surface, opposite the first grinding disc, includes a set of radial straight grooves, with groove faces of the straight grooves are the working face of the second grinding disc; the cross-sectional outline of the working face of the second grinding disc is arcuate or V-shaped or is a V-shape having an arc; during grinding, a workpiece spins inside the straight grooves, while under the effect of an advancing apparatus, the workpiece slides in translational motion along the straight grooves. The described grinding disc device has high-volume production capabilities, and the shape accuracy and size consistency of the cylindrical roller's cylindrical surface and the efficiency in machining are improved, and machining cost is reduced.

Disclosed is a wafer polishing apparatus including a base, a lower surface plate disposed on the upper surface of the base, an upper surface plate disposed on the lower surface plate and a first shape adjustment unit configured to deform the shape of the lower surface of the upper surface plate so that the lower surface of the upper surface plate has one of a concave shape, a flat shape and a convex shape in a first direction, and the first direction is a direction from the lower surface plate to the upper surface plate.

Disclosed is a wafer polishing apparatus including a base, a lower surface plate disposed on the upper surface of the base, an upper surface plate disposed on the lower surface plate and a first shape adjustment unit configured to deform the shape of the lower surface of the upper surface plate so that the lower surface of the upper surface plate has one of a concave shape, a flat shape and a convex shape in a first direction, and the first direction is a direction from the lower surface plate to the upper surface plate.

Provided is a method of lapping a semiconductor wafer, which can suppress the formation of a ring-shaped pattern in a nanotopography map. The method of lapping a semiconductor wafer includes: a stopping step of stopping lapping of a semiconductor wafer; a reversing step of reversing surfaces of the semiconductor wafer facing a upper plate and a lower plate after the stopping step; and a resuming step of resuming lapping of the semiconductor wafer after the reversing step while maintaining the reversal of the surfaces facing the plates.