A Chemical Mechanical Polishing, CMP, process applied to a wafer of Silicon Carbide having a thickness of, or lower than, 200 μm, comprising the steps of: arranging the wafer on a supporting head of a CMP processing apparatus, the wafer having a front side and a back side opposite to one another, the front side housing at least one electronic component and being coupled to the supporting head; deliver a polishing slurry on the wafer, wherein the polishing slurry has a pH in the range 2-3; pressing the back side of the wafer against a polishing pad of the CMP apparatus exerting, by the supporting head, a pressure on the polishing pad in the range 5-20 kPa; setting a rotation of the polishing pad in the range 30-180 rpm, and setting a rotation of polishing head in the range 30-180 rpm; setting and maintaining a CMP process temperature equal to, or below, 50° C.

A substrate processing apparatus includes a table, a pad holder, an elevating mechanism, and at least three centering mechanisms. The table is for supporting a substrate. The pad holder is for holding a polishing pad for polishing the substrate supported by the table. The elevating mechanism is for elevating the pad holder with respect to the substrate. The at least three centering mechanisms are for pushing the substrate supported by the table in a center direction of the table to position the substrate. The at least three centering mechanisms each include a rotation shaft arranged in a peripheral area of the table and a centering member mounted to the rotation shaft.

A substrate processing apparatus includes a table, a pad holder, an elevating mechanism, and at least three centering mechanisms. The table is for supporting a substrate. The pad holder is for holding a polishing pad for polishing the substrate supported by the table. The elevating mechanism is for elevating the pad holder with respect to the substrate. The at least three centering mechanisms are for pushing the substrate supported by the table in a center direction of the table to position the substrate. The at least three centering mechanisms each include a rotation shaft arranged in a peripheral area of the table and a centering member mounted to the rotation shaft.

The present application provides a grinding control method, a grinding control apparatus and a storage medium, and is applied in the field of semiconductor manufacturing processes. The method includes: acquiring a target resistance value of a metal film of a grinding object set by a user, determining a target output value of an eddy current sensor according to the target resistance value, acquiring an output value of the eddy current sensor in real time, and stopping a grinding task when the output value reaches the target output value.

A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

A method grinds a semiconductor wafer by treating the semiconductor wafer so as to remove material by way of a grinding tool containing grinding teeth having a height h, with a coolant being supplied into a contact region between the semiconductor wafer and the grinding tool, in which, at any time of the grinding, a flushing fluid is applied onto a region on one side of the semiconductor wafer by way of a nozzle.

A machine featuring a treatment tool that grinds a surface to a desired profile, imparts a desired roughness to that surface, and removes contamination from the surface, the machine configured to control multiple independent input variables simultaneously, the controllable variables selected from the group consisting of (i) velocity, (ii) rotation, and (iii) dither of the treatment tool, and (iv) pressure of the treatment tool against the surface. The machine can move the treatment tool with six degrees of freedom.