Patent classifications
B24B37/14
SURFACE PLATE FOR FINISH POLISHING, FINISH POLISHING DEVICE, AND POLISHING METHOD
Provided is a finish polishing surface plate configured such that a polishing film is mounted thereon. The finish polishing surface plate includes a plate body having a planar surface; and a plurality of island shaped protrusions formed on the surface of the plate body. In the plurality of island shaped protrusions, continuous grooved recesses are formed between the respective island shaped protrusions.
Synthetic grindstone, synthetic grindstone assembly, and method of manufacturing synthetic grindstone
A synthetic grindstone for performing a surface processing includes abrasive grains with an abrasive grain proportion (Vg) higher than 0 vol. % and equal to or lower than 40 vol. %, includes a nonwoven-fabric binder with a binder proportion (Vb) equal to or higher than 35 vol. % and lower than 90 vol. %. The synthetic grindstone has a porosity (Vp) higher than 10 vol. % and equal to or lower than 55 vol. %.
Lapping plate and method of making
The present disclosure involves a method of making a lapping plate by electrostatically coating a platen with solid resin powder and abrasive particles followed by curing the solid resin powder to form an abrasive coating. The present disclosure also involves related lapping plates.
Lapping plate and method of making
The present disclosure involves a method of making a lapping plate by electrostatically coating a platen with solid resin powder and abrasive particles followed by curing the solid resin powder to form an abrasive coating. The present disclosure also involves related lapping plates.
SUBSTRATE PROCESSING CONTROL SYSTEM, SUBSTRATE PROCESSING CONTROL METHOD, AND PROGRAM
A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that performs local polishing.
SUBSTRATE PROCESSING CONTROL SYSTEM, SUBSTRATE PROCESSING CONTROL METHOD, AND PROGRAM
A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that performs local polishing.
Lapping plate and method of making
The present disclosure involves a method of making a lapping plate by coating a platen with solid resin powder, abrasive particles, and an aqueous carrier followed by evaporating the aqueous carrier and curing the solid resin powder to form an abrasive coating. The present disclosure also involves related lapping plates.
Lapping plate and method of making
The present disclosure involves a method of making a lapping plate by coating a platen with solid resin powder, abrasive particles, and an aqueous carrier followed by evaporating the aqueous carrier and curing the solid resin powder to form an abrasive coating. The present disclosure also involves related lapping plates.
Wafer pin chuck fabrication and repair
In a wafer chuck design featuring pins or mesas making up the support surface, engineering the pins to have an annular shape, or to contain holes or pits, minimizes sticking of the wafer, and improves wafer settling. In another aspect of the invention is a tool and method for imparting or restoring flatness and roughness to a surface, such as the support surface of a wafer chuck. The tool is shaped such that the contact to the surface being treated is a circle or annulus. The treatment method may take place in a dedicated apparatus, or in-situ in semiconductor fabrication apparatus. The tool is smaller than the diameter of the wafer pin chuck, and may be approximate to the spatial frequency of the high spots to be lapped. The movement of the tool relative to the support surface is such that all areas of the support surface may be processed by the tool, or only those areas needing correction.
Wafer pin chuck fabrication and repair
In a wafer chuck design featuring pins or mesas making up the support surface, engineering the pins to have an annular shape, or to contain holes or pits, minimizes sticking of the wafer, and improves wafer settling. In another aspect of the invention is a tool and method for imparting or restoring flatness and roughness to a surface, such as the support surface of a wafer chuck. The tool is shaped such that the contact to the surface being treated is a circle or annulus. The treatment method may take place in a dedicated apparatus, or in-situ in semiconductor fabrication apparatus. The tool is smaller than the diameter of the wafer pin chuck, and may be approximate to the spatial frequency of the high spots to be lapped. The movement of the tool relative to the support surface is such that all areas of the support surface may be processed by the tool, or only those areas needing correction.