A tool for modifying substrate support elements of a substrate holder, the substrate support elements having support surfaces for supporting a substrate, the tool includes a main body having a main body surface, and multiple protrusions from the main body surface, the multiple protrusions having distal ends configured to contact the support surfaces to modify the substrate support elements. Furthermore, a lithographic apparatus and a method comprising such a tool are provided.

A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

The present disclosure relates to abrasive articles including conformable coatings, e.g. a hydrophilic coating, and polishing systems therefrom. The present disclosure provides an abrasive article including a ceramic body having an abrading surface and an opposed second surface, wherein the abrading surface of the ceramic body includes a plurality of engineered features each having a base and a distal end opposite the base and the ceramic body has a Mohs hardness of at least 7.5; a conformable metal oxide coating adjacent to and conforming to the plurality of engineered features, wherein the conformable metal oxide coating includes a first surface; and a conformable polar organic-metallic coating in contact with the first surface of the conformable metal oxide coating, wherein the conformable polar organic-metallic coating includes a chemical compound having at least one metal and an organic moiety having at least one polar functional group.

A method is provided and includes making a polishing table and a dummy disk rotate; bringing the dummy disk into contact with a table surface of the polishing table while a liquid is supplied to the table surface; measuring heights of the table surface at a plurality of measurement points while the dummy disk is moved on the table surface; and creating a table profile showing tilt of the table surface from measurement values of the heights of the table surface.

A method is provided and includes making a polishing table and a dummy disk rotate; bringing the dummy disk into contact with a table surface of the polishing table while a liquid is supplied to the table surface; measuring heights of the table surface at a plurality of measurement points while the dummy disk is moved on the table surface; and creating a table profile showing tilt of the table surface from measurement values of the heights of the table surface.

The present embodiments provide a mechanism for computing a thickness of a scanned wafer shape to determine a profile, and computing a delta correction value and a polishing end point time by using a computed PV value by the profile and a set predicted PV value and reflecting the same on the polishing time of each wafer which is under polishing. Accordingly, excellent flatness of a wafer surface can be achieved and simultaneously, a plurality of controllers can be controlled simultaneously to reduce equipment cost.

The present embodiments provide a mechanism for computing a thickness of a scanned wafer shape to determine a profile, and computing a delta correction value and a polishing end point time by using a computed PV value by the profile and a set predicted PV value and reflecting the same on the polishing time of each wafer which is under polishing. Accordingly, excellent flatness of a wafer surface can be achieved and simultaneously, a plurality of controllers can be controlled simultaneously to reduce equipment cost.

A planarization apparatus is provided. The planarization apparatus includes a platen, and a grinding wheel. The platen is configured to support a wafer. The grinding wheel is over the platen and configured to grind the wafer. The grinding wheel includes a base ring, and a plurality of grinding teeth mounted on the base ring. The plurality of grinding teeth includes a plurality of grinding abrasives, and the plurality of grinding abrasives is ball type.

A planarization apparatus is provided. The planarization apparatus includes a platen, and a grinding wheel. The platen is configured to support a wafer. The grinding wheel is over the platen and configured to grind the wafer. The grinding wheel includes a base ring, and a plurality of grinding teeth mounted on the base ring. The plurality of grinding teeth includes a plurality of grinding abrasives, and the plurality of grinding abrasives is ball type.