A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head to hold a substrate and bring a lower surface of the substrate into contact with the polishing pad, and an in-situ friction monitoring system including a friction sensor. The friction sensor includes a pad portion having a substrate contacting portion with an upper surface to contact the lower surface of the substrate, and a pair of capacitive sensors positioned below and on opposing sides of the substrate contacting portion.

This invention relates to a polishing pad and a method for manufacturing the same. The polishing pad may include a top pad layer and a window block. The top pad layer may include a groove pattern formed on an upper surface of the top pad layer. A first hole may be formed through the top pad layer. The window block may be inserted into the first hole. The top pad layer and the window block may have a structure coincided with following Formula 1.

[00001]$\begin{array}{cc}1.1\le \frac{\mathrm{Gap}+{\mathrm{Thk}}_{\mathrm{RTPC}}}{{\mathrm{Thk}}_{\mathrm{grv}}}\le 3.& \mathrm{Formula}1\end{array}$

In Formula 1, the gap may indicate a height difference between an upper surface of the top pad layer and an upper surface of the window block, the Thk.sub.RTPC may indicate a thickness of the window block, and the Thk.sub.grv may indicate a depth of the groove pattern.

A polishing article has a polishing surface and an aperture, the aperture including a first section and a second section. The polishing article includes a projection extending inwardly into the aperture. The polishing article includes a lower portion on a side of the first surface farther from the polishing surface. A window has a first portion positioned in the first section of the aperture and a second portion extending into the second section of the aperture. The window has a second surface substantially parallel to the polishing surface. A first adhesive adheres the first surface of the projection to the second surface of the window to secure the window to the projection and a second adhesive of different material composition than the first adhesive. The second adhesive is positioned laterally between the second portion of the window and the lower portion of the polishing article.

A film-thickness measuring method capable of substantially extending a wavelength range of a spectrum of reflected light from a workpiece, and accurately measuring a film thickness is disclosed. The film-thickness measuring method includes: pressing a workpiece against a polishing pad, while rotating a polishing table that supports the polishing pad, to polish the workpiece; during the polishing of the workpiece, directing light to the workpiece from a liquid-seal sensor and a transparent-window sensor disposed in the polishing table and receiving reflected light from the workpiece by the liquid-seal sensor and the transparent-window sensor; and determining a film thickness of the workpiece based on a spectrum of the reflected light from the workpiece.

An embodiment comprises: a lower plate; an upper plate which is disposed on the lower plate and rotates; a carrier which receives a wafer and is disposed on the lower plate; and a sensor unit for irradiating light to the wafer received in the carrier, detecting light reflected by the wafer, and outputting detection data according to the detection result, wherein the sensor unit rotates together with the upper plate.

A polishing pad is provided. The polishing pad includes a polishing layer and a detection window. The detection window is disposed in the polishing layer. The modulus of the detection window is larger than the modulus of the polishing layer at 30° C., and the modulus of the detection window is smaller than the modulus of the polishing layer at 50° C.

Disclosed is a light transmitting member for a polishing pad. The light transmitting member has a cylindrical or truncated conical shape, and a screw thread is formed on a side portion thereof. A polishing pad includes such a light transmitting member and a substrate polishing apparatus includes such a polishing pad.

Provided is a polishing unit that can reduce penetration of a polishing slurry into a base material layer and that can prevent impairment in polishing performance. A polishing unit (10a) in accordance with a first aspect of the present invention includes: a polishing pad (100a) that includes a polishing layer (101) and a base material layer (103); and a surface plate (150), the base material layer (103) having a diameter smaller than a diameter of the polishing layer (101) and greater than a diameter of the surface plate (150).

A chemical mechanical polishing pad window having a controlled texture surface comprising repeated patterned features. The window results in an improved endpoint detection and in situ rate monitoring by providing consistent values of the ISRM.sub.max-min characteristic over the lifetime of a CMP pad. Also provided is a chemical mechanical polishing pad with the inventive window.

A polishing table holds a polishing pad. A top ring holds a semiconductor wafer. A swing arm holds the top ring. The swing arm swings around a swing center on the swing arm during polishing. An optical sensor is disposed on the polishing table and measures an optical characteristic changeable in accordance with a variation in film thickness of the semiconductor wafer. A fluid supply control apparatus determines a distance from an axis of rotation to the optical sensor when the semiconductor wafer is rotated by the top ring. An end point detection section detects a polishing end point indicating an end of polishing based on the optical characteristic measured by the optical sensor and the determined distance.