There is provided a polishing tool for polishing a wafer. The polishing tool includes a base and a polishing layer fixed to the base. The polishing layer includes an electrically conductive material dispersed therein to eliminate static electricity generated when the polishing layer comes into contact with the wafer. Preferably, the electrically conductive material is carbon fiber, and the carbon fiber is included at a content of 3 wt % or more but 15 wt % or less.

An abrasive composition including a substrate with perforations. The perforations may have curved edges and different shapes. Abrasive particles to be braised to the substrate are sprinkled over the molten braise on the surface of the substrate, including on the curved edges of the perforations. The perforations provide a view of the work surface for the user and reduce noise, and also provide places for work surface debris to collect for later removal. The shape of the substrate itself may include particular surface areas intended for specific abrasion tasks, such as flat surfaces with different grades of abrasive particles and small radius edges for use as a cutting tool.

An abrasive composition including a substrate with perforations. The perforations may have curved edges and different shapes. Abrasive particles to be braised to the substrate are sprinkled over the molten braise on the surface of the substrate, including on the curved edges of the perforations. The perforations provide a view of the work surface for the user and reduce noise, and also provide places for work surface debris to collect for later removal. The shape of the substrate itself may include particular surface areas intended for specific abrasion tasks, such as flat surfaces with different grades of abrasive particles and small radius edges for use as a cutting tool.

The present disclosure relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad, and the present disclosure can prevent an error in detecting the end point due to the window in the polishing pad by minimizing the effect on transmittance according to the surface roughness of the window in the polishing pad in the polishing process, and allows the fluidity and loading rate of the polishing slurry in the polishing process to be implemented at similar levels by maintaining the surface roughness difference between the polishing layer and the window in the polishing pad within the predetermined range, thereby enabling the problem of deterioration of polishing performance due to the surface difference between the polishing layer and the window to be prevented.

Further, a method for manufacturing a semiconductor device to which a polishing pad is applied may be provided.

The present disclosure relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad, and the present disclosure can prevent an error in detecting the end point due to the window in the polishing pad by minimizing the effect on transmittance according to the surface roughness of the window in the polishing pad in the polishing process, and allows the fluidity and loading rate of the polishing slurry in the polishing process to be implemented at similar levels by maintaining the surface roughness difference between the polishing layer and the window in the polishing pad within the predetermined range, thereby enabling the problem of deterioration of polishing performance due to the surface difference between the polishing layer and the window to be prevented.

Further, a method for manufacturing a semiconductor device to which a polishing pad is applied may be provided.

A disc tool for a processing machine for grinding and/or polishing a workpiece (W); wherein the disc tool (10A, 10B, 10B) has a carrier (20) for attachment to an output (85) of the processing machine (80); wherein a cushion element (40A, 40B, 40C) made of elastic material and a retaining wall element (41A, 41B, 41C, 41D) for retaining the cushion element (40A, 40B, 40C, 61) are arranged on the carrier (20); wherein the retaining wall element (41A, 41B, 41C, 41D) is held on the carrier (20) by means of retaining bolts (35); wherein retaining bolt passage openings (48) of the retaining wall element (41A, 41B, 41C, 41D) extending through retaining mounts (28), of the carrier (20) are accommodated along bolt sections (36) of the retaining bolts (35) extending along the bolt longitudinal axes (BL), and the retaining wall element (41A, 41B, 41C, 41D) is held between bolt heads (37) of the retaining bolts (35) and the carrier (20); and wherein an adhesive layer (50) is arranged on a side of the retaining wall element (41A, 41B, 41C, 41D) opposite the carrier (20), on which adhesive layer a processing means (70) for grinding and/or polishing the workpiece (W) can be releasably attached to the disc tool (10A, 10B, 10B). The adhesive layer (50) has recesses (52) assigned to the bolt heads (37).

Provided are a polishing pad provided with a structural feature capable of maximizing the leakage prevention effect, the polishing pad including: a polishing layer including a first surface which is a polished surface and a second surface which is an opposite surface thereof, and including a first through hole passing through the first surface and the second surface; a window disposed in the first through hole; and a support layer disposed at the second surface of the polishing layer.

Provided are a polishing pad provided with a structural feature capable of maximizing the leakage prevention effect, the polishing pad including: a polishing layer including a first surface which is a polished surface and a second surface which is an opposite surface thereof, and including a first through hole passing through the first surface and the second surface; a window disposed in the first through hole; and a support layer disposed at the second surface of the polishing layer.

A disc-shaped polishing pad (1) is used for a polishing method of the present invention. The polishing pad (1) has a peripheral surface (111) on a polishing surface (10) side in an axial direction of the disc of a tapered surface whose diameter is reduced to the polishing surface (10). An angle formed by the peripheral surface (111) and the polishing surface (10) is 125° or more and less than 180°. The polishing pad (1) has a hardness immediately after a pressing surface is in close contact of 40 or more by a testing method specified in an appendix 2 of JIS K7312: 1996, “Spring Hardness Test Type C Testing Method”. A slurry containing abrasives is supplied to a polished surface larger than the polishing surface (10). The polishing surface (10) is pressed against the polished surface and the polishing pad (1) is moved to polish the polished surface.

A disc-shaped polishing pad (1) is used for a polishing method of the present invention. The polishing pad (1) has a peripheral surface (111) on a polishing surface (10) side in an axial direction of the disc of a tapered surface whose diameter is reduced to the polishing surface (10). An angle formed by the peripheral surface (111) and the polishing surface (10) is 125° or more and less than 180°. The polishing pad (1) has a hardness immediately after a pressing surface is in close contact of 40 or more by a testing method specified in an appendix 2 of JIS K7312: 1996, “Spring Hardness Test Type C Testing Method”. A slurry containing abrasives is supplied to a polished surface larger than the polishing surface (10). The polishing surface (10) is pressed against the polished surface and the polishing pad (1) is moved to polish the polished surface.