The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.

The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.

An embodiment relates to a polishing pad which is used in a chemical mechanical planarization (CMP) process and has excellent airtightness, wherein the polishing pad is excellent in airtightness of a window opening and thus can prevent water leakage that may occur during a CMP process.

An embodiment relates to a polishing pad which is used in a chemical mechanical planarization (CMP) process and has excellent airtightness, wherein the polishing pad is excellent in airtightness of a window opening and thus can prevent water leakage that may occur during a CMP process.

Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

A polishing layer having an endpoint detection window is manufactured in the following manner. First, a curing agent and a polymer which form the endpoint detection window are mixed, and then the mixture is poured into a mold to form a columnar material. Next, the roughness of the outer peripheral surface of the columnar material is adjusted, and a plurality of projections and recesses are formed on the outer peripheral surface. Next, in a state where the columnar material is housed in a mold frame, the mixture obtained by mixing the polymer and the curing agent is poured into the mold frame and solidified to create a polyurethane polyurea resin molded article. Next, the polyurethane polyurea resin molded article is horizontally cut with a necessary thickness so as to form a sheet-like member, and the sheet-like member forms a polishing layer having the endpoint detection window.

A polishing layer having an endpoint detection window is manufactured in the following manner. First, a curing agent and a polymer which form the endpoint detection window are mixed, and then the mixture is poured into a mold to form a columnar material. Next, the roughness of the outer peripheral surface of the columnar material is adjusted, and a plurality of projections and recesses are formed on the outer peripheral surface. Next, in a state where the columnar material is housed in a mold frame, the mixture obtained by mixing the polymer and the curing agent is poured into the mold frame and solidified to create a polyurethane polyurea resin molded article. Next, the polyurethane polyurea resin molded article is horizontally cut with a necessary thickness so as to form a sheet-like member, and the sheet-like member forms a polishing layer having the endpoint detection window.

A chemical mechanical polishing (CMP) pad with a release liner that has a pull tab is prepared by contacting the CMP pad to an adhesive layer with release liner. The adhesive layer sheet is cut along a first portion of a perimeter of the CMP pad. An extension of the adhesive layer is cut that extends beyond an edge of the CMP pad at the remaining portion of the perimeter of the CMP pad, thereby creating an extension of the adhesive layer sheet with the adhesive layer exposed. The exposed adhesive layer is cut to a depth not to extend into the release liner. The adhesive layer is removed from the exposed region leaving only the release liner pull tab as a continuous extension of the release liner material.

A chemical mechanical polishing (CMP) pad with a release liner that has a pull tab is prepared by contacting the CMP pad to an adhesive layer with release liner. The adhesive layer sheet is cut along a first portion of a perimeter of the CMP pad. An extension of the adhesive layer is cut that extends beyond an edge of the CMP pad at the remaining portion of the perimeter of the CMP pad, thereby creating an extension of the adhesive layer sheet with the adhesive layer exposed. The exposed adhesive layer is cut to a depth not to extend into the release liner. The adhesive layer is removed from the exposed region leaving only the release liner pull tab as a continuous extension of the release liner material.

Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements. Each polishing element comprises an individual surface that forms a portion of a polishing surface of the polishing pad and one or more sidewalls extending downwardly from the individual surface to define a plurality of channels disposed between the polishing elements. Each of the polishing elements has a plurality of pore-features formed therein. Each of the polishing elements is formed of a pre-polymer composition and a sacrificial material composition. In some cases, a sample of the cured pre-polymer composition has a glass transition temperature (T.sub.g) of about 80° C. or greater. A storage modulus (E′) of the cured pre-polymer composition at a temperature of 80° C. (E′80) can be about 200 MPa or greater.