Disclosed are a polyurethane for use in a polishing layer, and a polishing layer and a polishing pad using the same, the polyurethane including a terminal group represented by the following formula (I): R—(OX).sub.n— (I) wherein R represents a monovalent hydrocarbon group having 1 to 30 carbon atoms that may be substituted with a heteroatom or may be interrupted by a heteroatom, X represents an alkylene group having 2 to 4 carbon atoms, 90 to 100% of the alkylene group being an ethylene group, and n represents a number from 8 to 120.

Disclosed are a polyurethane for use in a polishing layer, and a polishing layer and a polishing pad using the same, the polyurethane including a terminal group represented by the following formula (I): R—(OX).sub.n— (I) wherein R represents a monovalent hydrocarbon group having 1 to 30 carbon atoms that may be substituted with a heteroatom or may be interrupted by a heteroatom, X represents an alkylene group having 2 to 4 carbon atoms, 90 to 100% of the alkylene group being an ethylene group, and n represents a number from 8 to 120.

The invention is an abrasive article for sharpening cutting blades mounted within a grinding apparatus. The article is a soft matrix in which are embedded abrasive particles, and this matrix is preferably encased within a dry and non-adherent shell or capsule. The article is capable of being fed into the apparatus, wherein it is crushed, leaving the abrasive particles free to contact and sharpen the blades by abrasion.

Disclosed is a polyurethane for use in a polishing layer, including a carboxylic acid ester group, and a polyurethane preferably having a carboxylic acid ester group in at least one of a side chain, a main chain terminal, and a main chain skeleton is preferably used. Also disclosed is a method for modifying a polishing layer, including the steps of: preparing a polishing layer including a polyurethane having a carboxylic acid ester group; and hydrolyzing the carboxylic acid ester group of the polyurethane, to produce a carboxyl group.

Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

A polishing pad for a semiconductor fabrication operation includes a polishing region and a window region, wherein both regions are made of an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

A polishing pad for a semiconductor fabrication operation includes a polishing region and a window region, wherein both regions are made of an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

The invention provides a polishing pad suitable for polishing integrated circuit wafers. A polyurethane polishing layer has a top surface and at least one groove in the polyurethane polishing layer. At least one copolymer wear detector located within the polyurethane polishing layer detects wear of the polishing layer adjacent the at least one groove. The at least one wear detector includes two regions, a first region being a fluorescent acrylate/urethane copolymer linked with a UV curable linking group and a second non-fluorescent region, The wear detector allows detecting wear of the polishing layer.

The invention provides a polishing pad suitable for polishing integrated circuit wafers. A polyurethane polishing layer has a top surface and at least one groove in the polyurethane polishing layer. At least one copolymer wear detector located within the polyurethane polishing layer detects wear of the polishing layer adjacent the at least one groove. The at least one wear detector includes two regions, a first region being a fluorescent acrylate/urethane copolymer linked with a UV curable linking group and a second non-fluorescent region, The wear detector allows detecting wear of the polishing layer.