Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

The present disclosure provides a polishing pad and a method of manufacturing a semiconductor device using the same. The method includes disposing a target layer on a semiconductor substrate and performing a chemical mechanical polishing process on the target layer using a polishing pad including a plurality of polishing protrusions facing the target layer. Each of the polishing protrusions includes a protruding portion and a surface layer at least partially covering the protruding portion, wherein the protruding portion is more elastic than the surface layer, and wherein the surface layer is harder than the protruding portion.

The present disclosure provides a polishing pad and a method of manufacturing a semiconductor device using the same. The method includes disposing a target layer on a semiconductor substrate and performing a chemical mechanical polishing process on the target layer using a polishing pad including a plurality of polishing protrusions facing the target layer. Each of the polishing protrusions includes a protruding portion and a surface layer at least partially covering the protruding portion, wherein the protruding portion is more elastic than the surface layer, and wherein the surface layer is harder than the protruding portion.

An abrasive article includes a first abrasive element, a second abrasive element, a resilient element having first and second major surfaces, and a carrier. The first element and the second abrasive element each comprises a first major surface and a second major surface. At least the first major surfaces of the first and second abrasive elements comprise a plurality of precisely shaped features. The abrasive elements comprise substantially inorganic, monolithic structures.

An abrasive article includes a first abrasive element, a second abrasive element, a resilient element having first and second major surfaces, and a carrier. The first element and the second abrasive element each comprises a first major surface and a second major surface. At least the first major surfaces of the first and second abrasive elements comprise a plurality of precisely shaped features. The abrasive elements comprise substantially inorganic, monolithic structures.

A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.

A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.

The CMP laminated polishing pad of the present invention includes at least a polishing layer and an under layer, wherein the under layer contains a resin obtained by polymerizing a polymerizable composition containing: (A) a polyrotaxane monomer having at least two polymerizable functional groups in a molecule; and (B) a polymerizable monomer other than the polyrotaxane monomer having at least two polymerizable functional groups in a molecule. According to the present invention, a polishing pad having not only good wear resistance but also excellent polishing characteristics (high polishing rate, low scratch property, and high flatness) can be provided.

The CMP laminated polishing pad of the present invention includes at least a polishing layer and an under layer, wherein the under layer contains a resin obtained by polymerizing a polymerizable composition containing: (A) a polyrotaxane monomer having at least two polymerizable functional groups in a molecule; and (B) a polymerizable monomer other than the polyrotaxane monomer having at least two polymerizable functional groups in a molecule. According to the present invention, a polishing pad having not only good wear resistance but also excellent polishing characteristics (high polishing rate, low scratch property, and high flatness) can be provided.

A polishing apparatus for an outer peripheral portion of a wafer includes: a stage for horizontally holding a disc-shaped wafer; a rotation drive unit for rotating the stage around its center axis as a rotation axis; polishing heads having an inner circumferential surface mounted with polishing pads; and a polishing-head drive mechanism for bringing the polishing pads into contact with the outer peripheral portion of the wafer and sliding the polishing heads in a direction slanted relative to a center axis of the wafer or a vertical direction thereof under application of a predetermined polishing pressure to the outer peripheral portion of the wafer. The inner circumferential surface of each of the polishing heads is mounted with two or more types of the polishing pads having different physical property values in the vertical direction.