Patent classifications
B24B37/24
POLISHING PADS AND SYSTEMS FOR AND METHODS OF USING SAME
A polishing pad includes a textured polishing layer comprising a working surface and a second surface opposite the working surface. The textured polishing layer comprises a polymeric blend comprising thermoplastic urethane in an amount of between 40 and 95 wt. %, and styrenic copolymer in an amount of between 5 and 60 wt. %, based on the total weight of the textured polishing layer.
POLISHING PADS AND SYSTEMS FOR AND METHODS OF USING SAME
A polishing pad includes a textured polishing layer comprising a working surface and a second surface opposite the working surface. The textured polishing layer comprises a polymeric blend comprising thermoplastic urethane in an amount of between 40 and 95 wt. %, and styrenic copolymer in an amount of between 5 and 60 wt. %, based on the total weight of the textured polishing layer.
Self-healing polishing pad
Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.
Self-healing polishing pad
Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.
Composition for a polishing pad, polishing pad, and process for preparing the same
In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.
Composition for a polishing pad, polishing pad, and process for preparing the same
In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.
POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING APPARATUS INLUDING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE CHEMICAL MECHANICAL POLISHING APPARATUS
A polishing pad for chemical mechanical polishing includes a polymer matrix and a temperature sensitive agent dispersed in the polymer matrix and constituting 1 to 40% by volume of the polishing pad, wherein the temperature sensitive agent includes a two-dimensional (2D) sheet material having a thermal conductivity of 1 W/(m.Math.K) or more.
POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING APPARATUS INLUDING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE CHEMICAL MECHANICAL POLISHING APPARATUS
A polishing pad for chemical mechanical polishing includes a polymer matrix and a temperature sensitive agent dispersed in the polymer matrix and constituting 1 to 40% by volume of the polishing pad, wherein the temperature sensitive agent includes a two-dimensional (2D) sheet material having a thermal conductivity of 1 W/(m.Math.K) or more.
Method of using polishing pad
A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance. The method further includes spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.
Method of using polishing pad
A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance. The method further includes spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.