Patent classifications
B24B37/26
POLISHING PAD, MANUFACTURING METHOD THEREOF, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
The present disclosure relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad, and the present disclosure can prevent an error in detecting the end point due to the window in the polishing pad by minimizing the effect on transmittance according to the surface roughness of the window in the polishing pad in the polishing process, and allows the fluidity and loading rate of the polishing slurry in the polishing process to be implemented at similar levels by maintaining the surface roughness difference between the polishing layer and the window in the polishing pad within the predetermined range, thereby enabling the problem of deterioration of polishing performance due to the surface difference between the polishing layer and the window to be prevented.
Further, a method for manufacturing a semiconductor device to which a polishing pad is applied may be provided.
POLISHING PAD, MANUFACTURING METHOD THEREOF, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
The present disclosure relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad, and the present disclosure can prevent an error in detecting the end point due to the window in the polishing pad by minimizing the effect on transmittance according to the surface roughness of the window in the polishing pad in the polishing process, and allows the fluidity and loading rate of the polishing slurry in the polishing process to be implemented at similar levels by maintaining the surface roughness difference between the polishing layer and the window in the polishing pad within the predetermined range, thereby enabling the problem of deterioration of polishing performance due to the surface difference between the polishing layer and the window to be prevented.
Further, a method for manufacturing a semiconductor device to which a polishing pad is applied may be provided.
Abrasive article having a non-uniform distribution of openings
An abrasive article having a plurality of apertures arranged in a non-uniform distribution pattern, wherein the pattern is spiral or phyllotactic, and in particular those patterns described by the Vogel equation. Also, provided is a back-up pad having a spiral or phyllotactic patterns of air flow paths, such as in the form of open channels. The back-up pad can be specifically adapted to correspond with an abrasive article having a non-uniform distribution pattern. Alternatively, the back-up pad can be used in conjunction with conventional perforated coated abrasives. The abrasive articles having a non-uniform distribution pattern of apertures and the back-up pads can be used together as an abrasive system.
Abrasive article having a non-uniform distribution of openings
An abrasive article having a plurality of apertures arranged in a non-uniform distribution pattern, wherein the pattern is spiral or phyllotactic, and in particular those patterns described by the Vogel equation. Also, provided is a back-up pad having a spiral or phyllotactic patterns of air flow paths, such as in the form of open channels. The back-up pad can be specifically adapted to correspond with an abrasive article having a non-uniform distribution pattern. Alternatively, the back-up pad can be used in conjunction with conventional perforated coated abrasives. The abrasive articles having a non-uniform distribution pattern of apertures and the back-up pads can be used together as an abrasive system.
POLISHING PAD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Provided are a polishing pad provided with a structural feature capable of maximizing the leakage prevention effect, the polishing pad including: a polishing layer including a first surface which is a polished surface and a second surface which is an opposite surface thereof, and including a first through hole passing through the first surface and the second surface; a window disposed in the first through hole; and a support layer disposed at the second surface of the polishing layer.
POLISHING PAD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Provided are a polishing pad provided with a structural feature capable of maximizing the leakage prevention effect, the polishing pad including: a polishing layer including a first surface which is a polished surface and a second surface which is an opposite surface thereof, and including a first through hole passing through the first surface and the second surface; a window disposed in the first through hole; and a support layer disposed at the second surface of the polishing layer.
Polishing method and polishing pad
A disc-shaped polishing pad (1) is used for a polishing method of the present invention. The polishing pad (1) has a peripheral surface (111) on a polishing surface (10) side in an axial direction of the disc of a tapered surface whose diameter is reduced to the polishing surface (10). An angle formed by the peripheral surface (111) and the polishing surface (10) is 125° or more and less than 180°. The polishing pad (1) has a hardness immediately after a pressing surface is in close contact of 40 or more by a testing method specified in an appendix 2 of JIS K7312: 1996, “Spring Hardness Test Type C Testing Method”. A slurry containing abrasives is supplied to a polished surface larger than the polishing surface (10). The polishing surface (10) is pressed against the polished surface and the polishing pad (1) is moved to polish the polished surface.
Polishing method and polishing pad
A disc-shaped polishing pad (1) is used for a polishing method of the present invention. The polishing pad (1) has a peripheral surface (111) on a polishing surface (10) side in an axial direction of the disc of a tapered surface whose diameter is reduced to the polishing surface (10). An angle formed by the peripheral surface (111) and the polishing surface (10) is 125° or more and less than 180°. The polishing pad (1) has a hardness immediately after a pressing surface is in close contact of 40 or more by a testing method specified in an appendix 2 of JIS K7312: 1996, “Spring Hardness Test Type C Testing Method”. A slurry containing abrasives is supplied to a polished surface larger than the polishing surface (10). The polishing surface (10) is pressed against the polished surface and the polishing pad (1) is moved to polish the polished surface.
INTEGRATED ABRASIVE POLISHING PADS AND MANUFACTURING METHODS
Embodiments described herein relate to integrated abrasive (IA) polishing pads, and methods of manufacturing IA polishing pads using, at least in part, surface functionalized abrasive particles in an additive manufacturing process, such as a 3D inkjet printing process. In one embodiment, a method of forming a polishing article includes dispensing a first plurality of droplets of a first precursor, curing the first plurality of droplets to form a first layer comprising a portion of a sub-polishing element, dispensing a second plurality of droplets of the first precursor and a second precursor onto the first layer, and curing the second plurality of droplets to form a second layer comprising portions of the sub-polishing element and portions of a plurality of polishing elements. Here, the second precursor includes functionalized abrasive particles having a polymerizable group chemically bonded to surfaces thereof.
INTEGRATED ABRASIVE POLISHING PADS AND MANUFACTURING METHODS
Embodiments described herein relate to integrated abrasive (IA) polishing pads, and methods of manufacturing IA polishing pads using, at least in part, surface functionalized abrasive particles in an additive manufacturing process, such as a 3D inkjet printing process. In one embodiment, a method of forming a polishing article includes dispensing a first plurality of droplets of a first precursor, curing the first plurality of droplets to form a first layer comprising a portion of a sub-polishing element, dispensing a second plurality of droplets of the first precursor and a second precursor onto the first layer, and curing the second plurality of droplets to form a second layer comprising portions of the sub-polishing element and portions of a plurality of polishing elements. Here, the second precursor includes functionalized abrasive particles having a polymerizable group chemically bonded to surfaces thereof.