The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is configured to dispense a slurry on the pad, and a flotation module configured to process a first fluid sprayed from the pad. The flotation module further includes an outlet fluidly connected to the second feeder and configured to output a second fluid, and a first tank configured to store a plurality of chemicals where the plurality of chemicals include a frother and a collector configured to chemically bond with chemicals in the first fluid.

The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is configured to dispense a slurry on the pad, and a flotation module configured to process a first fluid sprayed from the pad. The flotation module further includes an outlet fluidly connected to the second feeder and configured to output a second fluid, and a first tank configured to store a plurality of chemicals where the plurality of chemicals include a frother and a collector configured to chemically bond with chemicals in the first fluid.

A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a recess along a bottom portion. The recess has a recessed surface. The cap is positioned within the recess. The cap includes an annular wall secured to the polishing head and a floor joined to the annular wall at a joint. The floor extends across the annular wall, and the floor has an upper surface and a lower surface. The upper surface is spaced from the recessed surface to form a chamber therebetween. A deformation resistance of a portion of the floor proximate the joint is weakened to allow the portion of the floor proximate the joint to deflect relative to the polishing head by a change of pressure in the chamber.

A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a recess along a bottom portion. The recess has a recessed surface. The cap is positioned within the recess. The cap includes an annular wall secured to the polishing head and a floor joined to the annular wall at a joint. The floor extends across the annular wall, and the floor has an upper surface and a lower surface. The upper surface is spaced from the recessed surface to form a chamber therebetween. A deformation resistance of a portion of the floor proximate the joint is weakened to allow the portion of the floor proximate the joint to deflect relative to the polishing head by a change of pressure in the chamber.

A polishing pad, a polishing method and a method of forming a polishing pad are provided. The polishing pad includes a polishing layer and a plurality of arc grooves. The arc grooves are disposed in the polishing layer. Each of the arc grooves has two ends, and at least one end thereof has an inclined wall. The angle between the inclined wall of each groove and the surface plane of the polishing layer is less than 90 degree.

A polishing pad, a polishing method and a method of forming a polishing pad are provided. The polishing pad includes a polishing layer and a plurality of arc grooves. The arc grooves are disposed in the polishing layer. Each of the arc grooves has two ends, and at least one end thereof has an inclined wall. The angle between the inclined wall of each groove and the surface plane of the polishing layer is less than 90 degree.

A polishing pad includes a pad layer and one or more polishing structures over an upper surface of the pad layer, where each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, where the one or more polishing structures comprise at least one continuous line shaped segment extending along the upper surface of the pad layer, where each of the one or more polishing structures is a homogeneous material.

A polishing pad includes a pad layer and one or more polishing structures over an upper surface of the pad layer, where each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, where the one or more polishing structures comprise at least one continuous line shaped segment extending along the upper surface of the pad layer, where each of the one or more polishing structures is a homogeneous material.

A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.