A retaining ring for a polishing process is disclosed. The retaining ring includes a body comprising an upper portion and a lower portion, and a sacrificial surface disposed on the lower portion, the sacrificial surface comprising a negative tapered surface having a taper height that is about 0.0003 inches to about 0.00015 inches.

Disclosed is a chemical-mechanical wafer polishing device having an elastic membrane including a circular action plate portion, a membrane circumferential wall portion extending from a circumferential edge of the action plate portion along a direction perpendicular to a plate surface, and a chamber formed between the action plate portion and the membrane circumferential wall portion. The membrane includes a cooling channel portion having an action plate bottom surface section, and a supply penetration section penetrating the action plate portion such that one end is connected to the action plate bottom surface section and the other end is exposed to the upper side of the action plate portion. The chemical-mechanical wafer polishing device includes a cooling fluid supply portion having a cooling fluid supply tube connected to a free end of the supply penetration section, and providing a cooling fluid to the cooling channel portion.

A retaining ring for a polishing system is disclosed. The retaining ring has a process-resistant coating over a portion thereof. The process-resistant coating is a thin, smooth, conformal layer that is resistant to wear and chemical attack. The process-resistant coating is formed by a method that includes vapor deposition from a precursor gas mixture, which may deposit polyparaxyxylene from a gas mixture comprising paracyclophane. Adhesion of the process-resistant coating to the retaining ring may be enhanced by treating the surface of the ring prior to forming the coating. Resistance of the coating to the process may be further enhanced by treating the surface of the coating with an etching or deposition gas to impart texture.

A retaining ring for a polishing system is disclosed. The retaining ring has a process-resistant coating over a portion thereof. The process-resistant coating is a thin, smooth, conformal layer that is resistant to wear and chemical attack. The process-resistant coating is formed by a method that includes vapor deposition from a precursor gas mixture, which may deposit polyparaxyxylene from a gas mixture comprising paracyclophane. Adhesion of the process-resistant coating to the retaining ring may be enhanced by treating the surface of the ring prior to forming the coating. Resistance of the coating to the process may be further enhanced by treating the surface of the coating with an etching or deposition gas to impart texture.

A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Some implementations of a retaining ring has an inner surface having a first portion formed of multiple planar facets and a second portion that adjoins the first portion along a boundary and includes a frustoconical surface that is sloped downwardly from outside in. Some implementations of the retaining ring have a crenellated or serpentine inner surface, and/or an inner surface with alternating region of different surface properties or different tilt angles.

Some implementations of a retaining ring has an inner surface having a first portion formed of multiple planar facets and a second portion that adjoins the first portion along a boundary and includes a frustoconical surface that is sloped downwardly from outside in. Some implementations of the retaining ring have a crenellated or serpentine inner surface, and/or an inner surface with alternating region of different surface properties or different tilt angles.

A substrate holder capable of preventing an increase in a polishing rate of an edge portion of a substrate, even when polishing a plurality of substrates successively, is disclosed. The substrate holder includes: a top ring body configured to hold the substrate; and a retaining ring disposed so as to surround the substrate held by the top ring body. The retaining ring includes a pad pressing structure in an annular shape which is to be brought into contact with the polishing pad, and the pad pressing structure has a width in a range of 3 mm to 7.5 mm.

A substrate holder capable of preventing an increase in a polishing rate of an edge portion of a substrate, even when polishing a plurality of substrates successively, is disclosed. The substrate holder includes: a top ring body configured to hold the substrate; and a retaining ring disposed so as to surround the substrate held by the top ring body. The retaining ring includes a pad pressing structure in an annular shape which is to be brought into contact with the polishing pad, and the pad pressing structure has a width in a range of 3 mm to 7.5 mm.