The present invention provides a method for manufacturing a wafer polishing head, the method comprising the steps of: coupling a guide ring consisting of a plurality of layers to the edge of a base substrate; rounding the edge of the guide ring; forming a first coating layer on the rounded surface of the guide ring through coating; fixing a rubber chuck to the base substrate; and forming a second coating layer on the outer circumferential surfaces of an adhesive and an adhesive material through coating, from the rubber chuck to the first coating layer.

A carrier head includes a base assembly, a substrate mounting surface connected to the base assembly, and a plurality of segments disposed circumferentially around the substrate mounting surface to provide a retaining ring to surround a substrate mounted on the substrate mounting surface. An inner surface of each of the plurality of segments is configured to engage the substrate, and each segment of the plurality of segments of the retaining ring is pivotally connected to the base assembly such that a lower portion of each segment of the retaining ring is swingable toward and away from the substrate.

A carrier head includes a base assembly, a substrate mounting surface connected to the base assembly, and a plurality of segments disposed circumferentially around the substrate mounting surface to provide a retaining ring to surround a substrate mounted on the substrate mounting surface. An inner surface of each of the plurality of segments is configured to engage the substrate, and each segment of the plurality of segments of the retaining ring is pivotally connected to the base assembly such that a lower portion of each segment of the retaining ring is swingable toward and away from the substrate.

A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

Provided is a method of transferring a semiconductor wafer to a single-side polishing apparatus without forming scratches on the surface of the semiconductor wafer. The method includes: starting to splay the liquid from each spray hole; placing the semiconductor wafer on the retainer portion to hold a surface of the semiconductor wafer by suction without contact, and raising the tray to attach the semiconductor wafer to the polishing head, wherein a period of time from a point at which the semiconductor wafer is held by the retainer portion to a point at which the attaching of the semiconductor wafer W to the polishing head is completed is 5 s or more, or wherein a ratio of a total area of the protrusions to an area of the semiconductor wafer is 15% or more.