The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

A substrate processing method of grinding a first substrate in a combined substrate in which the first substrate and a second substrate are bonded to each other includes measuring a total thickness distribution of the combined substrate; measuring a thickness distribution of the first substrate; calculating a thickness distribution of the second substrate by subtracting the thickness distribution of the first substrate from the total thickness distribution of the combined substrate; deciding a relative inclination between a substrate holder configured to hold the combined substrate and a grinder configured to grind the combined substrate, based on the thickness distribution of the second substrate; and grinding the first substrate while holding the combined substrate at the inclination which is decided.

A substrate processing method of grinding a first substrate in a combined substrate in which the first substrate and a second substrate are bonded to each other includes measuring a total thickness distribution of the combined substrate; measuring a thickness distribution of the first substrate; calculating a thickness distribution of the second substrate by subtracting the thickness distribution of the first substrate from the total thickness distribution of the combined substrate; deciding a relative inclination between a substrate holder configured to hold the combined substrate and a grinder configured to grind the combined substrate, based on the thickness distribution of the second substrate; and grinding the first substrate while holding the combined substrate at the inclination which is decided.

An example method includes obtaining data indicative of a workpiece processing parameter. In some implementations, the example method includes determining a grinding depth for a semiconductor workpiece based at least in part on the data indicative of the workpiece processing parameter. In some implementations, the example method includes performing a grinding operation to remove material from the semiconductor workpiece to reduce a thickness of the semiconductor workpiece by the grinding depth.

An example method includes obtaining data indicative of a workpiece processing parameter. In some implementations, the example method includes determining a grinding depth for a semiconductor workpiece based at least in part on the data indicative of the workpiece processing parameter. In some implementations, the example method includes performing a grinding operation to remove material from the semiconductor workpiece to reduce a thickness of the semiconductor workpiece by the grinding depth.

An example method includes obtaining data indicative of a workpiece processing parameter. In some implementations, the example method includes determining a grinding depth for a semiconductor workpiece based at least in part on the data indicative of the workpiece processing parameter. In some implementations, the example method includes performing a grinding operation to remove material from the semiconductor workpiece to reduce a thickness of the semiconductor workpiece by the grinding depth.

An example method includes obtaining data indicative of a workpiece processing parameter. In some implementations, the example method includes determining a grinding depth for a semiconductor workpiece based at least in part on the data indicative of the workpiece processing parameter. In some implementations, the example method includes performing a grinding operation to remove material from the semiconductor workpiece to reduce a thickness of the semiconductor workpiece by the grinding depth.

A computer device is provided. The computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to store, in the at least one memory device, a model for predicting post-grinding thickness of a wafer; receive scan data of a first inspection of a wafer; execute the model using the scan data as inputs to determine a final thickness of the wafer; compare the final thickness to one or more thresholds; determine if the final thickness exceeds at least one of the one or more thresholds; and cause a grinding station to be adjusted when it is determined that the final thickness exceeds at least one of the one or more thresholds.