A method of processing a SiC ingot includes a resistance value measuring step of measuring an electric resistance value of an end face of the SiC ingot, a laser beam output adjusting step of adjusting the output of a laser beam according to the electric resistance value measured in the resistance value measuring step, and a peeling belt forming step in which, while a laser beam of such a wavelength as to be transmitted through the SiC ingot is being applied to the SiC ingot with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be formed, the SiC ingot and the focal point are put into relative processing feeding in an X-axis direction to form a belt-shaped peeling belt in the inside of the SiC ingot.

A dividing apparatus divides a workpiece along projected dicing lines into chips, the workpiece being stuck to an upper surface of a protective tape mounted on an annular frame. The dividing apparatus includes a frame holding unit for holding the annular frame and a dividing unit for pressing the workpiece in the vicinity of one at a time of the projected dicing lines and dividing the workpiece into chips along the projected dicing line. The dividing unit includes a holder for holding a portion of the workpiece in the vicinity of the projected dicing line where the workpiece is to be broken, from both upper and lower surfaces of the workpiece, and a presser for pressing chips next to chips held by the holder across the projected dicing line where the workpiece is to be broken, thereby to divide the workpiece along the projected dicing line.

A dividing device divides a wafer from an ingot by slicing the ingot by using a dividing layer which is formed by relatively moving a laser beam to a predetermined depth of the ingot from one of both end faces of the ingot. The dividing device for a wafer includes: first fixing part that fixes the other of the both end faces of the ingot; second fixing part that is arranged on a first central axis line of the ingot so as to face the first fixing part and fixes the one of the both end faces of the ingot; and tension part that apply a tensile force to the ingot via the first and second fixing parts. The tension part rotates one end of the dividing layer with another end as a fulcrum so as to generate moments for slicing the ingot with the dividing layer as a boundary.

There is provided a processing method for a package substrate having a plurality of division lines formed on the front side. The processing method includes the steps of holding the back side of the package substrate by using a holding tape and fully cutting the package substrate along the division lines to such a depth corresponding to the middle of the thickness of the holding tape by using a profile grinding tool, thereby dividing the package substrate into individual semiconductor packages. The profile grinding tool has a plurality of projections for cutting the package substrate respectively along the plural division lines. Each projection has an inclined side surface.

A method of processing a plate-shaped workpiece that includes layered bodies containing metal which are formed in superposed relation to projected dicing lines, includes the steps of holding the workpiece on a holding table, and, thereafter, cutting the workpiece along the projected dicing lines with an annular cutting blade, thereby separating the layered bodies. The cutting blade has a plurality of through holes defined in an outer peripheral portion thereof that cuts into the workpiece and extending through the cutting blade from a face side to a reverse side thereof, but not open at an outer peripheral edge thereof. The step of cutting the workpiece includes the step of cutting the workpiece while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

A wafer has a device area on one side with a plurality of devices partitioned by a plurality of division lines. Either side of the wafer is attached to an adhesive tape supported by a first annular frame. A modified region is formed in the wafer along the division lines by a laser. The wafer is placed on a support member whose outer diameter is smaller than an inner diameter of the first annular frame. After applying the laser beam, the adhesive tape is expanded thereby dividing the wafer along the division lines. A second annular frame is attached to a portion of the expanded adhesive tape. An inner diameter of the second annular frame is smaller than the outer diameter of the support member and smaller than the inner diameter of the first annular frame.

Methods and apparatuses for separating sheets of brittle material are disclosed. According to one embodiment, a separation apparatus for separating a sheet of brittle material includes a first separation cam positioned adjacent to a sheet conveyance pathway and a second separation cam positioned opposite from and downstream of the first separation cam. The first and second separation cams may be rotated such that the contact faces of the separation cams periodically extend across a centerline of the conveyance pathway. Rotation of the first and second separation cams may be synchronized such that at least the portion of the contact face of the first separation cam and at least the portion of the contact face of the second separation cam periodically extend across the centerline of the conveyance pathway at a separation time and periodically do not extend across the centerline of the conveyance pathway at a non-separation time.

A tape is stuck to the front surface of a workpiece in such a manner that the direction in which the stretch rate becomes the lowest when a predetermined force is applied to the tape is non-parallel to each of multiple planned dividing lines extending in a lattice manner. In this case, each of the multiple planned dividing lines does not extend along the direction perpendicular to this direction. This can reduce the ratio of the region to which the tape does not stick in the front surface of the workpiece in the vicinity of the boundary between each of the multiple planned dividing lines and a region in which a device is formed and suppress deterioration of the processing quality when the workpiece is divided from the back surface side by a cutting blade.

Methods of processing crystalline material include providing a boule with the crystalline material, the boule having a bottom end and an opposed top end; providing a boule-handling carrier that has a first surface extending in a first plane and an opposing second surface extending in a second plane. The second surface can be provided as parallel to the first surface or not parallel to the first surface. The methods include bonding the second surface of the carrier to the bottom end of the boule and then performing at least one processing step on the top end of the boule.