An amount of warp of a wafer is not only reduced, but the amount of warp of the wafer is also accurately controlled to a desired amount. The present invention relates to a method for slicing a semiconductor single crystal ingot, by which a cylindrical semiconductor single crystal ingot is bonded to and held by a holder in a state where the ingot is rotated at a predetermined rotation angle around a crystal axis of the ingot different from a center axis of a cylinder of this ingot and the ingot is sliced by a cutting apparatus in this state. The predetermined rotation angle at the time of bonding and holding the ingot with the use of the holder in such a manner that an amount of warp of a wafer sliced out by the cutting apparatus becomes a predetermined amount.

A cutting device of a silicon rod cutting system, and the silicon rod cutting system. The cutting device includes: a support frame, installed on a machine base of the silicon rod cutting system; two cutting machine head mechanisms, wherein each cutting machine head mechanism is provided with a diamond wire, a cutting segment of the diamond wire is used for cutting a silicon rod from top to bottom while moving; and a feeding mechanism, wherein the support frame is connected with the two cutting machine head mechanisms by means of the feeding mechanism, and the two cutting segments are disposed opposite to each other; and the feeding mechanism is used for driving the two cutting machine head mechanisms to move towards and away from each other, so as to adjust the distance between the two cutting segments.

Disclosed is a workplate for Y-axis compensation of an ingot and a Y-axis compensation method of the ingot using the same, which is configured to facilitate Y-axis compensation of the ingot in a state in which the ingot is attached to the workplate at a cutting-plane angle so as to be cut using a wire-cutting apparatus. More particularly, the workplate includes a bottom plate, having an upper surface formed to be curved downwards with respect to a longitudinal direction of the ingot attached to the workplate, and a top plate, coupled to the bottom plate such that a lower surface thereof is movable along the upper surface of the bottom plate and configured to enable the ingot to be coupled to an upper portion thereof at an X-axis cutting-plane angle.

A cutting method for cutting a workpiece is provided. This cutting method includes holding the workpiece including a crystal structure having a c-axis inclined with respect to a perpendicular to a surface and a c-plane perpendicular to the c-axis and cutting the workpiece along a planned cutting plane that is perpendicular to the surface and is inclined with respect to the c-plane by rotating a cutting blade having an annular cutting edge and making a tip portion of the cutting edge cut into the workpiece. In the cutting the workpiece, the tip portion is made to cut into the workpiece in a state in which a force in such an orientation as to bring an angle formed by the planned cutting plane and the tip portion close to 0 acts on the cutting edge from the workpiece when the tip portion is made to cut into the workpiece.