Patent classifications
B81B3/0072
Carrier substrate for stress sensitive device and method of manufacture
A carrier substrate and a method for making a carrier substrate are disclosed. In an embodiment a carrier substrate includes a substrate body having a multilayer structure, electrical connection pads on a top surface of the substrate body, an organic cushion layer on the top surface of the substrate body, electrically conductive elongated parts arranged on top of the cushion layer, wherein each conductive elongated part is contacted to a respective electric connection pad and a solder pad located at an end of each elongated part distant from the respective connection pad.
MEMS DEVICES WITH SUPPORT STRUCTURES AND ASSOCIATED PRODUCTION METHODS
A microelectromechanical system (MEMS) device contains a movable MEMS structure, a first support structure in which an edge of the MEMS structure is attached, a cavity which is bounded by the MEMS structure and the first support structure, and a second support structure which is attached in the cavity and at the edge of the MEMS structure and is configured so as to support the edge of the MEMS structure mechanically.
Thin film material transfer method
A method of transferring a two-dimensional material such as graphene onto a target substrate for use in the fabrication of micro- and nano-electromechanical systems (MEMS and NEMS). The method includes providing the two-dimensional material in a first lower state of strain; and applying the two-dimensional material onto the target substrate whilst the two-dimensional material is under a second higher state of strain. A device comprising a strained two-dimensional material suspended over a cavity.
MEMS device and method for producing the same
A MEMS device includes a first electrode structure and a second electrode structure forming a capacitive sensing arrangement. The MEMS device includes a plurality of anti-stiction bumps arranged between the first electrode structure and the second electrode structure at a corresponding plurality of locations. The plurality of locations being projected into a main surface of the second electrode structure is distributed so as to comprise a first distribution density in a first main surface region of the main surface and so as to comprise second, different distribution density in a second main surface region of the main surface, the second main surface region being delimited from the first main surface region.
Non-destructive detecting device for component residual stress gradient
The present disclosure relates to the technical field of non-destructive detecting of residual stress, and in particular to a non-destructive detecting device for component residual stress gradient. the non-destructive detecting device comprises: groups of transmitting transducers and receiving transducers arranged symmetrically to each other, the transmitting transducers closer to the symmetry axis have greater excitation frequencies; an acoustic wedge coupled to the groups of transmitting transducers and receiving transducers, wherein groups of cylindrical transmitting tunnels and receiving tunnels are provided obliquely within the transmitting connection area and the receiving connection area through their top surfaces and toward their bottom surfaces, the transmitting transducers are coupled to the transmitting tunnels in a one-to-one correspondence, the receiving transducers are coupled to the receiving tunnels in a one-to-one correspondence, and the bottom surfaces of the transmitting connection area and the receiving connection area are pressed against the surface of the detected component; and a calculation processing module electrically connected to the transmitting transducers and the receiving transducers. The non-destructive detecting device solves the problem that the residual stress values of components at different penetration depths cannot be detected at the same time.
MEMS DEVICE WITH A DIAPHRAGM HAVING A NET COMPRESSIVE STRESS
An implementation of a MEMS device includes a constrained diaphragm comprising a surface, the diaphragm having a net compressive stress; and a backplate comprising a surface facing the surface of the diaphragm, the surface of the backplate having a center, and a post extending from the surface of the backplate, wherein the post is located at or near a center of the surface and limits a maximum deflection of the diaphragm.
MEMS process power
A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.
MIRROR DEVICE
A mirror device includes a support portion, a movable portion, and a pair of torsion bars disposed on both sides of the movable portion on a first axis. The movable portion includes a frame-shaped frame connected to the pair of torsion bars and a mirror unit disposed inside the frame. The mirror unit is connected to the frame in each of a pair of connection regions located on both sides of the mirror unit in a direction parallel to a second axis. A region other than the pair of connection regions in a region between the mirror unit and the frame is a space. An outer edge of the mirror unit and an inner edge of the frame are connected to each other so that a curvature in each of the pair of connection regions is continuous when viewed from a direction perpendicular to the first and the second axes.
Microphone device with single crystal piezoelectric film and method of forming the same
A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.
INTRINSIC-STRESS SELF-COMPENSATED MICROELECTROMECHANICAL SYSTEMS TRANSDUCER
A diaphragm for use in a transducer, the diaphragm including a flexible layer configured to deflect in response to changes in a differential pressure. The flexible layer includes a lattice grid. The lattice grid includes a first plurality of substantially elongate openings oriented along an axis and a second plurality of substantially elongate openings extending generally parallel to the axis. The second plurality of openings is substantially offset from the first plurality of openings in a direction substantially parallel to the axis. The first plurality of openings and the second plurality of openings define a first plurality of spaced apart grid beams extending between and substantially parallel to the axis and a second plurality of spaced apart grid beams extending substantially perpendicular to the axis. The second plurality of grid beams is configured to connect adjacent ones of the first plurality of grid beams.