A microelectromechanical systems device includes a vibrator and a reinforcing film. The vibrator includes a piezoelectric element configured to convert pressure to an electrical signal. The reinforcing film is configured to reinforce strength of the vibrator. The vibrator further has a groove at which a portion of the reinforcing film is disposed.

A free-standing microstructure may be formed from an engineered substrate including a first silicon layer, a second silicon layer, and an intermediate layer. The second silicon layer may include a monocrystalline silicon film. The intermediate layer may be between the first silicon layer and the second silicon layer. The intermediate layer may include a silicon- or germanium-based material having a different lattice constant than the first silicon layer or the second silicon layer. The intermediate layer of the free-standing microstructure may further include one or more voids wherein at least a portion of the silicon- or germanium-based material is absent between the first silicon layer and the second silicon layer.

A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1≥A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element.

A transducer assembly can include a base. The transducer assembly can include a stress isolation standoff located on the base. The transducer assembly can include a MEMS die disposed on the stress isolation standoff. The transducer assembly can include a die attach adhesive disposed between the MEMS die and the base. The die attach adhesive can bond the MEMS die to the base. The stress isolation standoff can be embedded in the die attach adhesive between the base and the MEMS die.

A hinge for a micromechanical and/or nanomechanical structure includes: a support, and a movable part in an out-of-plane direction. The hinge allows for the out-of-plane displacement of the movable part. The hinge further includes two torsion beams extending along the axis of rotation of the hinge, two bending elements mechanically connecting the movable part and the support and having at least one pair of a first and of a second beam parallel with each other and extending in a plane perpendicular to the axis of rotation, the first beam being connected to the support and the second beam being connected to the movable part, the first and second beams being connected to one another by a first connecting element at a longitudinal end, the two beams extending in the same direction from the first connecting element.

A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

Provided is a semiconductor chip, including: a semiconductor substrate; a thin film formed on the semiconductor substrate, the thin film having internal stress; and a semiconductor device formed on the semiconductor substrate that has the thin film formed thereon, wherein the semiconductor chip warps due to the internal stress of the thin film.

A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1≥A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element.