An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis, a first wiring which is provided on the connection portion, a second wiring which is provided on the support portion, and an insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one of the first wiring and the second wiring and covers a corner of the first connection part. The rigidity of a first metal material forming the first wiring is higher than the rigidity of a second metal material forming the second wiring. The other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening.

The present invention relates, in part, to a discovery of a method for using atomic layer deposition (ALD) to improve the stability of refractory materials in high temperature steam, and compositions produced by the method.

An actuator device includes: a support portion; a movable portion; a first connection portion connecting the movable portion to the support portion on a first axis so that the movable portion is swingable around the first axis; and a first wiring provided on the first connection portion. The first wiring includes a first main body formed of a metal material having a Vickers hardness of 50 HV or more. The first main body includes a first surface facing the first connection portion and a second surface other than the first surface. The second surface has a shape in which a curvature is continuous over the entire second surface in a cross-section perpendicular to an extension direction of the first wiring.

An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis, a first wiring which is provided on the connection portion, a second wiring which is provided on the support portion, and an insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one of the first wiring and the second wiring and covers a corner of the first connection part. The rigidity of a first metal material forming the first wiring is higher than the rigidity of a second metal material forming the second wiring. The other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening.

A method for manufacturing a micromechanical timepiece part starting from a silicon-based substrate, including, providing a silicon-based substrate, forming pores on the surface of at least one part of a surface of the silicon-based substrate of a depth of at least 10 μm, preferably of at least 50 μm, and more preferably of at least 100 μm, the pores being designed in order to open out at the external surface of the micromechanical timepiece part. A micromechanical timepiece part including a silicon-based substrate which has, on the surface of at least one part of a surface of the silicon-based substrate, pores of a depth of at least 10 μm, preferably of at least 50 μm, and more preferably of at least 100 μm, the pores being designed in order to open out at the external surface of the micromechanical timepiece part.

A micromechanical component for a sensor device, including a seismic mass, which is situated at and/or in a mounting and which includes a first electrode area, a second electrode area electrically insulated from the first electrode area, and a connecting area made up of at least one electrically insulating material. The first electrode area and the second electrode area each mechanically contact the connecting area and are connected to one another via the connecting area. At least one first conductive area of the first electrode area and a second conductive area of the second electrode area are structured out of a first semiconductor and/or metal layer. The first electrode area also includes a third conductive area. The second electrode area also includes a fourth conductive area. The third conductive area and the fourth conductive area are structured out of a second semiconductor and/or metal layer.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.

A microfluidic sensor comprising: a first substrate; a second substrate; a cavity formed between the first substrate and the second substrate, the cavity comprising a reservoir portion and a channel portion extending from the reservoir portion; a capacitive element disposed between the first substrate and the second substrate, the capacitive element being at least partially disposed in the channel portion of the cavity; and a dielectric sensing liquid provided in the reservoir portion. Upon application of a force to the first substrate adjacent the reservoir portion, the reservoir portion is configured to deform and displace the sensing liquid along the channel portion, so as to change the capacitance of the capacitive element within the channel portion.

A MEMS structure includes a substrate, an inter-dielectric layer on a front side of the substrate, a MEMS component on the inter-dielectric layer, and a chamber disposed within the inter-dielectric layer and through the substrate. The chamber has an opening at a backside of the substrate. An etch stop layer is disposed within the inter-dielectric layer. The chamber has a ceiling opposite to the opening and a sidewall joining the ceiling. The sidewall includes a portion of the etch stop layer.