The present invention relates, in part, to a discovery of a method for using atomic layer deposition (ALD) to improve the stability of refractory materials in high temperature steam, and compositions produced by the method.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a pillar structure, a fin structure, and a buffering structure. The pillar structure is disposed on the substrate. The fin structure is connected to the pillar structure and is separate from the substrate. The buffering structure is disposed in the fin structure and includes a soft material layer and an air gap surrounded by the soft material layer. A method of manufacturing the semiconductor structure is also provided.

A MEMS microphone, includes a substrate with a back cavity, and a capacitive system arranged on the substrate, the capacitive includes a back plate and a diaphragm, a reinforcing portion is located between the diaphragm and the substrate, a projection of an inner surface of the reinforcing portion along a vibration direction of the diaphragm is flush with an inner surface of the back cavity or located in the back cavity, the reinforcing portion includes an etched barrier wall and a sacrificial layer located within the etched barrier wall. Compared with the related art, the MEMS microphone disclosed by the present disclosure could improve the reliability.

A semiconductor structure includes a substrate, a fixed member disposed on the substrate, a floating member connected to the fixed member, and a buffering structure disposed in the floating member. The floating member is separated from the substrate. The floating member includes a first conductive layer and a second conductive layer over the first conductive layer. The buffering structure includes a soft material layer and an air gap surrounded by the soft material layer. The second conductive layer is separated from the air gap.