Provided herein is an apparatus including a cavity in a first side of a first silicon wafer, and an oxide layer on the first side and in the cavity. A first side of a second silicon wafer is bonded to the first side of the first silicon wafer. A gap control structure is on a second side of the second silicon wafer, and a MEMS structure in the second silicon wafer. A eutectic bond is bonding the second side of the second silicon wafer to a third silicon wafer. A lower cavity is between the second side of the silicon wafer and the third silicon wafer, wherein the gap control structure is outside of the lower cavity and the eutectic bond.

A microphone device includes a substrate having a first surface, a wall disposed on the first surface, a microelectromechanical systems (MEMS) transducer, and an integrated circuit. Both the MEMS transducer and the integrated circuit are mounted on the first surface of the wall. The wall separates the MEMS transducer from the integrated circuit and acoustically isolates the MEMS transducer from the integrated circuit. The microphone device additionally includes a first set of wires extending through the wall and electrically connecting the MEMS transducer to the integrated circuit. The microphone device further includes a second set of wires electrically connecting the integrated circuit to a conductor on the substrate.

Described herein is a force attenuator for a force sensor. The force attenuator can linearly attenuate the force applied on the force sensor and therefore significantly extend the maximum sensing range of the force sensor. The area ratio of the force attenuator to the force sensor determines the maximum load available in a linear fashion.

An actuator (1) is provided with: a movable part (120); a support part (110, 210) which supports the movable part; and a plurality of torsion bars (230) (i) each of which connects the movable part and the support part along a long direction such that the movable part is capable of swinging around a rotational axis which is along the long direction and (ii) which are arranged along a short direction; the farther each torsion bar is from the rotational axis, the smaller a spring constant of each torsion bar is.

A MEMS sensor comprising preloaded suspension springs and a method for mechanically preloading suspension springs of a MEMS sensor are described. The MEMS sensor comprises a MEMS support structure; a plurality of suspension springs connected to the support structure; and, a proof mass flexibly suspended by the suspension springs; wherein at least one of the suspension springs is mechanically preloaded with a compressive force for reducing the natural frequency of said proof mass.

A physical quantity sensor includes a driven section and a drive spring that supports the driven section so that the driven section is displaceable in a first direction. The drive spring has a serpentine shape and includes a plurality of spring structures extending in a second direction that intersects a first direction. At least one of the spring structures has a thin section that is thinner in a third direction that intersects the first and second directions than the other portions of the drive spring.

The application relates to MEMS transducers comprising at least one support structure for connecting a backplate structure of the transducer with an underlying substrate. A strengthening portion is provided in the region of the support structure.

A method for forming a microelectromechanical systems (MEMS) device may include performing a first silicon-on-nothing process to form a first cavity in a substrate. The method may include depositing an epitaxial layer on a surface of the substrate. The method may include performing a second silicon-on-nothing process to form a second cavity in the epitaxial layer. The method may include exposing the first cavity and the second cavity by removing a portion of the substrate and the epitaxial layer.

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

According to one embodiment, a sensor includes a structure body including a deforming portion, and a first sensing element provided at the deforming portion. The first sensing element includes first to fourth magnetic layers and a first intermediate layer. The first magnetic layer is provided between the second and third magnetic layers. The fourth magnetic layer is provided between the first and third magnetic layers. The first intermediate layer is provided between the second and first magnetic layers. The third magnetic layer includes at least one of a first material or a second material. The first material includes at least one selected from the group consisting of IrMn, PtMn, PdPtMn, and RuRhMn. The second material includes at least one of CoPt, (Co.sub.xPt.sub.100-x).sub.100-yCr.sub.y, or FePt. A crystallinity of at least a portion of the fourth magnetic layer is higher than a crystallinity of the first magnetic layer.