A method for transferring a semiconductor layer from a donor substrate to a receiver substrate having an open cavity includes forming an embrittlement plane in the donor substrate, making, by bringing the donor substrate and the receiver substrate into contact, a packaging in which the cavity is buried, and separating the packaging by fracturing along the embrittlement plane. The separating causes a transfer of the semiconductor layer to the receiver substrate and a sealing of the cavity by the semiconductor layer. The method also includes, prior to making the packaging, implanting diffusing species into the donor substrate or into the receiver substrate and, subsequently to making the packaging and prior to separating the packaging, diffusing the species into the cavity.

Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.

Microelectromechanical system (MEMS) packages and methods of making thereof. A MEMS package includes at least one MEMS device disposed on a base substrate and a lid disposed on the base substrate. The lid is configured to enclose the at least one MEMS device. The lid includes a body portion configured to be coupled to the base substrate, a ceiling portion and a membrane. The ceiling portion, the body portion and the ceiling portion form a cavity in which the at least one MEMS device is enclosed. The membrane is configured to be in contact with the ceiling portion. The membrane is formed from a filtering fabric and is configured to substantially block one or more of liquids and contaminants from passing into the cavity.

The present disclosure provides a micro electro mechanical system (MEMS) structure, including a device substrate having a first region and a second region different from the first region, a capping substrate bonded over the device substrate, a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure, a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure, an outgassing material, wherein the outgassing material includes a top surface and a sidewall exposed to the first cavity, the outgassing material is free from being in direct contact with the capping substrate, wherein the outgassing material includes a trench, and a passivation layer disposed over the device substrate, and is in direct contact with the outgassing material.

The present application provides a thin film getter structure having a miniature heater and a manufacturing method thereof, the thin film getter structure comprising: a substrate; a heater formed at a side of a main face of the substrate; and a getter thin film formed on a surface of the heater, wherein the heater comprises: a first insulating thin film; a thin film resistance formed on an upper surface of the first insulating thin film; and a second insulating thin film covering the thin film resistance, both ends of the thin film resistance being electrodes exposed from the second insulating thin film.

A semiconductor device includes an active region and a trapping region positioned peripherally with respect to the active region, the trapping region presenting trapping apertures permitting the passage of particles, the trapping apertures being in fluid communication with at least one trapping chamber for trapping the particles. A method for manufacturing the semiconductor devices from one semiconductor wafer presents semiconductor device regions to be singulated along a dicing portion line. The method includes in each semiconductor device region, making a semiconductor device precursor by making or applying at least one active element in an active region, making at least one trapping chamber and making, in a trapping region of the semiconductor device region positioned more peripherally than the active region, trapping apertures in fluid communication with the at least one trapping chamber; and singulating the semiconductor device regions by separating the semiconductor device precursors along the dicing portion lines.

The present disclosure provides a micro electro mechanical system (MEMS) structure, including a device substrate having a first region and a second region different from the first region, a capping substrate bonded over the device substrate, a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure, a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure, a passivation layer in the first cavity, an outgassing material over the passivation layer, wherein the outgassing material comprises a top surface and a sidewall exposed to the first cavity.

A method of manufacturing a microelectromechanical system includes forming of an electromechanical element on a substrate. The method further includes preparation of an encapsulation package to form a sealed cavity integrating the electromechanical element, with the sealed cavity having a volume smaller than 10 mm.sup.3. The method includes physical vapor deposition of a getter film on the substrate or on a wall of the encapsulation package so that the getter film has a specific absorption surface area smaller than 8 m.sup.2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.

Methods for fabricating MEMS tuning fork gyroscope sensor system using silicon wafers. This provides the possibly to avoid glass. The sense plates can be formed in a device layer of a silicon on insulator (SOI) wafer or in a deposited polysilicon layer in a few examples.

A provided protective cover member is a protective cover member configured to be placed on a face of an object, the face having an opening. The protective cover member includes a laminate, and the laminate includes: a protective membrane having a shape configured to cover the opening when the member is placed on the face; and an adhesive agent layer. The adhesive agent layer includes a cured adhesive layer of a silicone adhesive agent composition including an addition-curable silicone adhesive agent. The above protective cover member is a member reducing deformation thereof and peeling thereof from a placement face at high temperatures, for example, in reflow soldering.