Various embodiments of the present disclosure are directed towards a method for manufacturing an integrated chip, the method comprises forming an interconnect structure over a semiconductor substrate. An upper dielectric layer is formed over the interconnect structure. An outgas layer is formed within the upper dielectric layer. The outgas layer comprises a first material that is amorphous. A microelectromechanical systems (MEMS) substrate is formed over the interconnect structure. The MEMS substrate comprises a moveable structure directly over the outgas layer.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.

A sensor with a chamber comprises a base, a cavity body, a sensing element, and a porous gel material. The cavity body is disposed on the base and has a cavity wall and an inner space formed inside the cavity wall, the sensing element is disposed on the cavity wall, and the porous gel material is disposed between the base and the cavity body, the porous gel material has a porosity of not less than 80%, so that gas is capable of communicating between the inner space of the cavity body and an outside, thereby forming a passage for gas to enter and exit to balance a pressure in the sensor with the chamber, increase a support of the sensor with the chamber, and reduce the risk of conventional bonding between the sensing element and the base using die-bonding adhesive.

A MEMS device comprises an electro mechanical element in a sealed chamber containing a gas comprising a reactive gas selected to react with any contaminants that may be present or formed on the operating surfaces of the device in a manner to maximize the electrical conductivity of the surfaces during operation of the device. The MEMS device may comprise a MEMS switch having electrical contacts as the operating surfaces. The reactive gas may comprise hydrogen or an azane, optionally mixed with an inert gas, or any combination of the gases. The corresponding process provides a means to substantially reduce or eliminate contaminants present or formed on the operating surfaces of MEMS devices in a manner to maximize the electrical conductivity of the surfaces during operation of the devices.

There is provided a MOMS sensor comprising a fiber interface comprising a fiber passthrough for one or more optical fibers, a cavity comprising an element hermetically encapsulated within the cavity, wherein the element is movably anchored by SiN arms, which are movable with respect to walls of the cavity, wherein the SiN arms comprise anchor portions at first ends of the SiN arms, which are connected to the element, and at second ends of the SiN arms, which are connected to the walls of the cavity, and the fiber interface is configured to receive the fibers through the fiber passthrough into positions for communications of light between the element and the fibers. In this way a robust structure that supports sensitivity of the sensor is provided.

The present disclosure concerns a micromechanical device and a method for manufacturing the same. The micromechanical device may comprise a membrane structure suspended on a substrate. The membrane structure may comprise a perforated gas permeable membrane comprising a plurality of perforations, and a reinforcement structure being coupled with the perforated membrane for stiffening the perforated membrane and/or for increasing the mechanical stability of the perforated membrane in order to attenuate an oscillation of the perforated membrane.

A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

The invention concerns a hermetically sealed package forming a low pressure or vacuum enclosure, and receiving at least one component of imaging bolometer type. The hermetically sealed package includes a monolithic layer of a getter material capable of capturing gases present in the enclosure, the layer of getter material having a thickness in the range from 20 nanometers to 200 nanometers.

A package encapsulating electronic components of one or more Micro-Electro-Mechanical Systems (MEMS) devices has hermetic seal that enables the use of a frame with rough surface. That is, the frame surrounds the components and is affixed to a surface of the substrate with a frame adhering layer. A cover is affixed to the frame with a cover adhering layer. Each of the frame adhering layer and the cover adhering layer comprises a solder layer between metallic adhesion layers. The solder layer comprises reflowed solder balls. The package enables direct contact of a substrate with a heat sink.

A method for producing a micromechanical device having a damper structure. The method includes: (A) providing a micromechanical wafer having a rear side; (B) applying a liquid damper material onto the rear side; (C) pressing a matrix against the rear side in order to form at least one damper structure in the damper material; (D) curing the damper material; and (E) removing the matrix.