A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

The present publication discloses a micromechanical structure including at least one active element, the micromechanical structure comprising a substrate, at least one layer formed on the substrate forming the at least part of the at least one active element, mechanical contact areas through which the micromechanical structure can be connected to other structures like printed circuit boards and like. In accordance with the invention the micromechanical structure includes weakenings like trenches around the mechanical contact areas for eliminating the thermal mismatch between the active element of the micromechanical structure and the other structures.

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.

A micromechanical pressure sensor device is equipped with a sensor substrate including a front side and a rear side. The device includes a pressure sensor unit suspended in the sensor substrate, a first cavity above the pressure sensor unit, which is exposed toward the front side via one or multiple access openings, one or multiple stress relief trenches, which laterally enclose the pressure sensor unit and form a fluidic connection from the rear side to the first cavity, and a circuit substrate, on which the rear side of the sensor substrate is bonded. A second cavity, which is in fluidic connection with the stress relief trenches, is formed below the pressure sensor unit in the circuit substrate. At least one channel is provided in a periphery of the pressure sensor unit, which is in fluidic connection with the second cavity and is exposed to the outside.

An integrated device package is disclosed. The integrated device package can include a packaging structure defining a cavity. An integrated device die can be disposed at least partially within the cavity. A gel can be disposed within the cavity surrounding the integrated device. A portion of the gel can be disposed between a lower surface of the integrated device die and an upper surface of the packaging structure within the cavity.

A semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; and a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate. The semiconductor device further includes at least one electrical interconnect structure electrically connected to the first surface of the substrate, and a flexible carrier electrically connected to the at least one electrical interconnect structure, where the flexible carrier wraps around the semiconductor chip and extends over the second surface of the substrate such that a folded cavity is formed around the semiconductor chip.

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.

Examples provided herein are associated with a molded lead frame of a sensor package. An example sensor package may include a molded lead frame that includes an opening in the molded lead frame, wherein the opening extends from a mount-side of the molded lead frame to a chip-side of the molded lead frame, wherein the chip-side of the molded lead frame is opposite the mount-side; and a sensor mounted to the chip-side of the molded lead frame.

A conductor path structure has a damping device for an oscillation-damped and/or vibration-damped (electronic, electromechanical, micromechanical) component. The conductor path structure has a first base body made of a carrier material including a connection area for receiving the component. The connection area is arranged separated from an area of the first base body surrounding it and is arranged oscillation-damped and/or vibration damped and co-acting with an intrinsic damping device of the conductor path structure. The conductor path structure includes a second base body arranged at a distance under the first base body, wherein above the second base body of the conductor path structure at least one adhesive layer of a damping material is provided. The intrinsic damping device is formed by said at least one adhesive layer arranged between the connection area of the first base body and the area of the second base body arranged below the connection area.

A semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; and a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate. The semiconductor device further includes at least one electrical interconnect structure electrically connected to the first surface of the substrate, and a flexible carrier electrically connected to the at least one electrical interconnect structure, where the flexible carrier wraps around the semiconductor chip and extends over the second surface of the substrate such that a folded cavity is formed around the semiconductor chip.