A sensor package comprising: a sensor, wherein the sensor comprises a sensing structure formed in a material layer and one or more further material layers arranged to seal the sensing structure to form a hermetically sealed sensor unit; a support structure; one or more springs flexibly fixing the hermetically sealed sensor unit to the support structure; wherein the one or more springs are formed in the same material layer as the sensing structure of the sensor unit; and one or more external package wall(s) encapsulating the sensor unit, the support structure, and the one or more springs, wherein the support structure is fixed to at least one of the package wall(s). The springs decouple mechanical stresses between the sensor unit and the external package wall(s) so as to reduce the long term drift of scale factor and bias.

A micromechanical pressure sensor device is equipped with a sensor substrate including a front side and a rear side. The device includes a pressure sensor unit suspended in the sensor substrate, a first cavity above the pressure sensor unit, which is exposed toward the front side via one or multiple access openings, one or multiple stress relief trenches, which laterally enclose the pressure sensor unit and form a fluidic connection from the rear side to the first cavity, and a circuit substrate, on which the rear side of the sensor substrate is bonded. A second cavity, which is in fluidic connection with the stress relief trenches, is formed below the pressure sensor unit in the circuit substrate. At least one channel is provided in a periphery of the pressure sensor unit, which is in fluidic connection with the second cavity and is exposed to the outside.

In an embodiment a sensor arrangement includes a sensor die having a contact area, a suspended area and a sensitive element located in the suspended area, an interposer including at least two vias connecting a first side of the interposer to a second side of the interposer and a support mechanically and electrically connecting the contact area of the sensor die to the first side of the interposer, the support including at least two contact joints.

An electronic device with stud bumps is disclosed. In an embodiment an electronic device includes a carrier board having an upper surface and an electronic chip mounted on the upper surface, the electronic chip having a mounting side facing the upper surface of the carrier board, a top side facing away from the upper surface, and sidewalls connecting the mounting side to the top side, wherein the electronic chip has equal to or less than 5 stud bumps per square millimeter of a base area of the mounting side, wherein the carrier board has at least one recess in the upper surface, and wherein at least one of the stud bumps reaches into the recess.

A semiconductor device includes a semiconductor chip including a substrate and a MEMS element, wherein the substrate includes a surface, and wherein the MEMS element is disposed at the surface of the substrate and the MEMS element includes a sensitive area; a first electrical interconnect structure electrically connected to the surface of the substrate; a carrier electrically connected to the first electrical interconnect structure; and a first stress relieve spring entrenched in the carrier, wherein the first stress relieve spring is a single integral channel that comprises two parallel channels that join together at a periphery of the first electrical interconnect structure to form the single integral channel that wraps around a portion of the periphery of the first electrical interconnect structure, wherein the two parallel channels extend outward, in parallel, from the periphery of the first electrical interconnect structure to a first termination region of the carrier.

A device includes: a chip; a support member; an adhesive layer disposed on the support member; and a wire electrically connected to the sensor chip on a side face of the sensor chip. Herein the adhesive layer includes a material exhibiting a dilatancy property in which a shear stress increases in a multi-dimensional function as a shear rate increases.

Aspects of the disclosure described herein related to packaging an ultrasound-on-a-chip. In some embodiments, an apparatus includes an ultrasound-on-a-chip that has through-silicon vias (TSVs) and an interposer coupled to the ultrasound-on-a-chip and including vias, where the ultrasound-on-a-chip is coupled to the interposer such that the TSVs in the ultrasound-on-a-chip are electrically connected to the vias in the interposer. In some embodiments, an apparatus includes an ultrasound-on-a-chip having bond pads, an interposer that has bond pads and that is coupled to the ultrasound-on-a-chip, and wirebonds extending from the bond pads on the ultrasound-on-a-chip to the bond pads on the interposer.

A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes MEMS dies (200) and a device wafer (100), wherein the device wafer (100) is provided with a control unit and an interconnection structure (300); a first bonding face (100a) of the device wafer (100) is provided with first contact pads (410) and an input and output connection member (420); the MEMS dies (200) are arranged side by side on the first bonding face (100a) by a bonding layer (500); the MEMS die (200) has a micro-cavity (210) and a second contact pad (220); the micro-cavity (210) of the MEMS die (200) has a through hole (210a) in communication with the outside; the first contact pad (410) is electrically connected to the corresponding second contact pad (220); and the bonding layer (500) has an opening (510) exposing the input and output connection member (420). According to the MEMS package structure, the size of the package structure can be reduced with respect to an existing integration method; and various MEMS dies can be integrated on the same device wafer, and thus, a function integration capability of the package structure can also be improved.

A micromechanical sensor device and manufacturing method. The micromechanical sensor device is provided with a cap substrate, which has a first front side and a first back side, and which has a through-opening as a media entry region; and with a sensor substrate, which has a second front side and a second back side, and which has, on the second front side, a sensor region that is embedded in an island-like region suspended on the remaining sensor substrate. The island-like region is mechanically decoupled from the remaining sensor substrate by a lateral stress-relief trench and by a cavity situated in the sensor substrate, underneath the island-like region. The first back side is bonded to the second front side so that the through opening is situated above the sensor region. The sensor region is covered by a gel, which fills the through-opening and the stress-relief trench at least partially.