A force sensor comprises a first substrate, a second substrate, a third substrate, and a package body. The first substrate includes a fixed electrode, at least one first conductive contact, and at least one second conductive contact. The second substrate is disposed on the first substrate and electrically connected to the first conductive contact of the first substrate. The second substrate includes a micro-electro-mechanical system (MEMS) element corresponding to the fixed electrode. The third substrate is disposed on the second substrate and includes a pillar connected to the MEMS element. The package body covers the third substrate. The foregoing force sensor has better reliability.

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

A groove is provided at an outer side of an outer wall of a pressure sensor in a radial direction, and opens at one end side in an axial direction of the pressure sensor. A horizontally extending stopper is provided at an inner wall of a sensor accommodation recessed portion. A fixing portion is provided on the outer side of the outer wall of the pressure sensor in the radial direction, and enters the stopper. The fixing portion protrudes outward in the radial direction from the outer wall of the pressure sensor accommodated in the accommodation recessed portion, and contacts the stopper in the axial direction.

According to an aspect of the present invention, there is provided an oil pressure sensor attaching structure in which a plurality of guide protrusion portions are disposed with a gap in a circumferential direction and surround an oil passage opening portion. The guide protrusion portions have an arc-shaped wall portion and a protrusion portion. An accommodation portion which has an accommodation opening portion opening upward is provided on an inside of the plurality of guide protrusion portions in a radial direction. The sensor has a sensor case which has a columnar portion, a plurality of flange portions, and an annular portion that surrounds the columnar portion. The flange portion is disposed between an upper surface of an oil passage body and the protrusion portions in the vertical direction at a first position in the circumferential direction. The annular portion has a first portion and a second portion.

An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

A MEMS pressure sensor includes a monolithic body of semiconductor material having a first face and a second face and housing a first buried cavity and a second buried cavity, arranged under the first buried cavity and projecting laterally therefrom. A first sensitive region is formed between the first buried cavity and the first face at a first depth, and a second sensitive region is formed between the second buried cavity and the first face at a second depth greater than the first depth. The monolithic body also houses a first piezoresistive sensing element and a second piezoresistive sensing element, integrated in the first and second sensitive regions, respectively.

A sensor includes a sensor substrate, and an upper lid substrate joined to an upper surface of the sensor substrate. The sensor substrate includes a fixed part, a deformable beam connected to the fixed part, and a weight connected to the beam. The weight is movable relative to the fixed part. The upper lid substrate includes a first part containing silicon and a second part joined to the first part and containing glass. The first part includes a projection protruding toward the sensor substrate relative to the second part. The sensor has high accuracy or high reliability.

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

In one aspect of the disclosure, a semiconductor package is disclosed. The semiconductor package includes a lead frame. A semiconductor die is attached to a first side of the lead frame. A protective shell covers at least a first portion of the first surface of the semiconductor die. The protective shell comprises of ink residue. A layer of molding compound covers an outer surface of the protective shell and exposed portion of the first surface of the semiconductor die. A cavity space is within an inner space of the protective shell and the first portion of the top surface of the semiconductor die.

A method for manufacturing a micromechanical sensor, including the steps: providing a MEMS wafer that includes a MEMS substrate, a defined number of etching trenches being formed in the MEMS substrate in a diaphragm area, the diaphragm area being formed in a first silicon layer that is situated at a defined distance from the MEMS substrate; providing a cap wafer; bonding the MEMS wafer to the cap wafer; and forming a media access point to the diaphragm area by grinding the MEMS substrate.