A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

A MEMS device comprises an electro mechanical element in a sealed chamber containing a gas comprising a reactive gas selected to react with any contaminants that may be present or formed on the operating surfaces of the device in a manner to maximize the electrical conductivity of the surfaces during operation of the device. The MEMS device may comprise a MEMS switch having electrical contacts as the operating surfaces. The reactive gas may comprise hydrogen or an azane, optionally mixed with an inert gas, or any combination of the gases. The corresponding process provides a means to substantially reduce or eliminate contaminants present or formed on the operating surfaces of MEMS devices in a manner to maximize the electrical conductivity of the surfaces during operation of the devices.

Various arrangements for a microelectromechanical (MEMS) die and a controller die in vertically stacked structures are disclosed. The orientations of the MEMS die and the controller die vary in the various arrangements. In one embodiment, a backside surface of the MEMS die is operably connected to a frontside surface of the controller die. In another embodiment, a backside surface of the MEMS die is operably connected to a backside surface of the controller die. In another embodiment, a frontside surface of the MEMS die is operably connected to a backside surface of the controller die. In yet another embodiment, a frontside surface of the MEMS die is operably connected to a frontside surface of the controller die.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Discharge circuits, devices and methods. In some embodiments, a MEMS device can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS device can further include a discharge circuit implemented relative to the electromechanical assembly. The discharge circuit can be configured to provide a preferred arcing path during a discharge condition affecting the electromechanical assembly. The MEMS device can be, for example, a switching device, a capacitance device, a gyroscope sensor device, an accelerometer device, a surface acoustic wave (SAW) device, or a bulk acoustic wave (BAW) device. The discharge circuit can include a spark gap assembly having one or more spark gap elements configured to facilitate the preferred arcing path.

A semiconductor device can include a first metal trace, a first via disposed on the first metal trace, a second metal trace disposed on the first via, and an insulator interposed between the first metal trace and the first via. The insulator can be configured to lower an energy barrier or redistribute structure defects or charge carriers, such that the first metal trace and the first via are electrically connected to each other when power is applied. The semiconductor device can further include a dummy via disposed on the first metal trace.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.