A micro-electro-mechanical systems (MEMS) terminal structure of board-to-board electrical connector and manufacturing method thereof are provided. The terminal of the terminal structure includes a side arm, a bent portion, and a flexible arm integrally formed as one component. The flexible arm includes a first portion and a second portion. The first portion and the side arm form an insertion space. The second portion and the side arm form a locking space. The second portion of the flexible arm has a contact portion. The insertion space is greater than the locking space. The terminal has curved and locking features to extend the moment arm of the terminal for improving the terminal flexibility. The terminal contacts a mating terminal through multiple points, thereby improving the contact stability and providing the locking function. Furthermore, by using the MEMS techniques for semiconductor industries, the terminal of micro board-to-board electrical connector can be manufactured.

Provided are monolithic structures comprising one or more suspended, nanoporous membranes that are in contact with one or more fluidic cavities, methods of making same, and exemplary uses of same. The monolithic structures can be formed using a transmembrane etch. The monolithic structures can be used, as examples, as filters and filtration modules in microfluidic devices, dialysis devices, and concentration devices in laboratory, industrial, and medical processes.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A method for manufacturing a micro normally-closed structure. The method includes steps of providing a flexible arm, and a stationary base and a fixed contact separated from the flexible arm, wherein the flexible arm is free to move and includes a first end configured at one terminal and a movable contact configured at another terminal, the transient base is configured at where corresponds to the first end, and the fixed contact is configured at where corresponds to the movable contact; forming a temporary electrical connection between the first end and the stationary base; forming a temporary electrical conduction between the movable contact and the fixed contact; maintaining the temporary electrical connection and the temporary electrical conduction; and securing the first end to the stationary base permanently which causes the temporary electrical connection turn into a permanent electrical connection and the temporary electrical conduction turn into the micro normally-closed structure.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A semiconductor device can include a first metal trace, a first via disposed on the first metal trace, a second metal trace disposed on the first via, and an insulator interposed between the first metal trace and the first via. The insulator can be configured to lower an energy barrier or redistribute structure defects or charge carriers, such that the first metal trace and the first via are electrically connected to each other when power is applied. The semiconductor device can further include a dummy via disposed on the first metal trace.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.