A micro structure with a substrate having a top surface; a first electrode with a horizontal orientation parallel to the top surface of the substrate, wherein the first electrode is embedded within the substrate so that a top surface of the first electrode coincides with the top surface of the substrate; a dielectric layer arranged on the top surface of the first electrode; and a second electrode arranged above the dielectric layer.

A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there is no continuous electrically conductive path extending from the switching conductor region to the at least one anchor. Capacative and ohmic switches, a varactor, a phase shifter, a tuneable power splitter/combiner, tuneable attenuator, SPDT switch and antenna apparatus comprising said devices.

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

Micro-electromagnetically actuated latched miniature relay switches formed from laminate layers comprising a spring and magnet, electromagnetic coils, magnetic latching material, and transmission line with contacts. Preferably the miniature relay switches transmit up to about 50 W of DC or AC line power, and carry up to about 10 A of load current, with an overall volume of less than about 100 mm.sup.3. In addition to switching large power, the device preferably requires less than 3 V to actuate, and has a latching feature that retains the switch state after actuation without the need for external applied voltage or current.

A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

A MEMS acceleration detection device including a housing having a cavity and a spring mass system assembled into the cavity of the housing. A lid enclosing the spring mass system in the cavity and contacting a top surface of the housing.

An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes and a contact point on a substrate. The method further includes forming a MEMS beam over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.