A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.

The present invention relates to an electromechanical switch and a method for manufacturing the same, and more particularly, to a superconducting contact electromechanical switch that reliably operates at an ultra-low temperature (10 to 100 mK) and has low on-state resistance and a method for manufacturing the same.

An electromechanical switch according to an embodiment of the present invention includes: a substrate; a first electrode disposed on the substrate; a second electrode disposed on the substrate; a third electrode disposed on the substrate; and a switch body disposed at a central point surrounded by the first to third electrodes on the substrate. Here, each of the second and third electrodes is spaced a predetermined distance from the first electrode.

The present disclosure provides an MEMS switch device and an electronic apparatus. The MEMS switch device includes a base substrate, a membrane bridge structure, and a first ground line, a signal line and a second ground line sequentially arranged on a first side surface of the base substrate at intervals; the membrane bridge structure has a first end electrically connected to the first ground line, and a second end, opposite to the first end, electrically connected to the second ground line; and the membrane bridge structure includes a membrane bridge body structure and at least one protruding structure on the membrane bridge body structure, where the protruding structure protrudes from the membrane bridge body structure in a direction perpendicular to the first side surface of the base substrate.