A micromechanical component for a sensor device. The component includes a first seismic mass, the first seismic mass displaced out of its first position of rest by a first limit distance into a first direction along a first axis mechanically contacting a first stop structure, and including a second seismic mass which is displaceable out of its second position of rest at least along a second axis, the second axis lying parallel to the first axis or on the first axis, and a second stop surface of the second seismic mass, displaced out of its second position of rest into a second direction counter to the first direction along the second axis, mechanically contacting a first stop surface of the first seismic mass adhering to the first stop structure.

A microelectromechanical system, including a substrate having a major plane of extension. The microelectromechanical system includes a mass structure. The mass structure is formed to be movable relative to the substrate in a vertical direction, perpendicularly to the major plane of extension. The mass structure includes an electrode structure. The substrate includes a counter-electrode structure. The electrode structure and the counter-electrode structure are coupled capacitively. The mass structure has a deformation in a resting state of the microelectromechanical system. The electrode structure and/or the counter-electrode structure are formed as a function of the deformation of the mass structure.

Embodiments of the invention include an accelerometer system. The system includes an accelerometer sensor comprising first and second electrode configurations and an inertial mass between the first and second electrode configurations. In one example, the accelerometer sensor being fabricated as symmetrically arranged about each of three orthogonal mid-planes. The system also includes an accelerometer controller configured to apply control signals to each of the first and second electrode configurations to provide respective forces to maintain the inertial mass at a null position between the first and second electrode configurations. The accelerometer controller can measure a first pickoff signal and a second pickoff signal associated with the respective first and second electrode configurations. The first and second pickoff signals can be indicative of a displacement of the inertial mass relative to the null position. The accelerometer controller can calculate an acceleration based on the first and second pickoff signals.

System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al.sub.2O.sub.3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO.sub.2).

A micro-electro-mechanical-systems (MEMS) device is disclosed that is configured to operate as a reservoir computer including performing sensing and computing co-locally. The MEMS device includes circuitry for: generating a modulated input signal based on an input signal; generating a MEMS deflection signal based on the modulated input signal and a time-delayed MEMS deflection signal; sampling the MEMS deflection signal N times during a time internal T to generate a MEMS deflection matrix, wherein MEMS deflection matrix has a size M×N, wherein N corresponds to a number of virtual nodes of the reservoir computer and M is a number of time steps of time interval T; receiving a trained weight matrix, wherein the trained weight matrix is trained by linear regression; and multiplying the MEMS deflection matrix by the trained weight matrix to generate an output signal that classifies the input signal.

A method for operating an electronic device comprising a first and second MEMS device and a semiconductor substrate disposed upon a mounting substrate includes subjecting the first MEMS device and the second MEMS device to physical perturbations, wherein the physical perturbations comprise first physical perturbations associated with the first MEMS device and second physical perturbations associated with the second MEMS device, wherein the first physical perturbations and the second physical perturbations are substantially contemporaneous, determining in a plurality of CMOS circuitry formed within the one or more semiconductor substrates, first physical perturbation data from the first MEMS device in response to the first physical perturbations and second physical perturbation data from the second MEMS device in response to the second physical perturbations, determining output data in response to the first physical perturbation data and to the second physical perturbation data, and outputting the output data.

An acceleration sensor with differential graphene resonant beams includes a substrate, a sensitive mass plate, a first insulating layer, a second insulating layer, a first excitation electrode pair, a first graphene resonant beam, a second graphene resonant beam, a third insulating layer, a second excitation electrode pair, and a vacuum cover. An indirect acceleration-sensitive mode is adopted, so that the sensitive mass block directly senses acceleration to be measured, and converts the acceleration to be measured into a concentrated force to cause axial displacement of the sensitive mass block and then to cause a change in the axial stress of the graphene resonate beams, thereby causing a change in the resonant frequency of the beams.

A physical quantity sensor includes: a base substrate; a movable portion; a plurality of movable electrode fingers which are provided in the movable portion; a fixed electrode finger which is provided on the base substrate; and a fixing portion which fixes the movable portion to the base substrate. In the movable electrode fingers, a movable electrode finger which opposes the fixing portion in the first direction is included. A clearance between the movable electrode finger and the fixing portion is smaller than a clearance between the movable electrode finger and the fixed electrode finger. The width of the movable electrode finger is greater than the width of other movable electrode finger.

The present disclosure provides a composite sensor and a manufacturing method thereof. The composite sensor includes: a first substrate and a second substrate configured to be laminated with the first substrate; a pressure sensor located on the first substrate and configured to sense a change in external pressure; and an acceleration sensor located on the second substrate and configured to sense a change in acceleration. A pressure film of the pressure sensor is configured to be spaced from the second substrate to form a pressure cavity, and a proof mass of the acceleration sensor is configured to be spaced from the first substrate to form a first anti-collision cavity. The present disclosure may reduce the chip area and reduce mutual interference.

A method of forming an IC (integrated circuit) device is provided. The method includes receiving a first wafer including a first substrate and including a plasma-reflecting layer disposed on an upper surface thereof. The plasma-reflecting layer is configured to reflect a plasma therefrom. A dielectric protection layer is formed on a lower surface of a second wafer, wherein the second wafer includes a second substrate. The second wafer is bonded to the first wafer, such that a cavity is formed between the plasma-reflecting layer and the dielectric protection layer. An etch process is performed with the plasma to form an opening extending from an upper surface of the second wafer and through the dielectric protection layer into the cavity. A resulting structure of the above method is also provided.