Patent classifications
B81B2201/0235
FORMING A PASSIVATION COATING FOR MEMS DEVICES
In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.
COMBINED CORRUGATED PIEZOELECTRIC MICROPHONE AND CORRUGATED PIEZOELECTRIC VIBRATION SENSOR
A combined MicroElectroMechanical structure (MEMS) includes a first piezoelectric membrane having one or more first electrodes, the first piezoelectric membrane being affixed between a first holder and a second holder; and a second piezoelectric membrane having an inertial mass and one or more second electrodes, the second piezoelectric membrane being affixed between the second holder and a third holder.
METHOD FOR MANUFACTURING A MEMS DEVICE BY FIRST HYBRID BONDING A CMOS WAFER TO A MEMS WAFER
A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.
Optomechanical resonator stabilization for optomechanical devices
An optomechanical device optomechanical device for stabilizing an optomechanical resonator comprising a circuit configured to generate a first optical signal and a second optical signal, modulate the first optical signal, modulate the second optical signal, and combine the first optical signal and the second optical signal into a combined optical signal to direct the combined optical signal into an assembly. An inner sidewall of a first beam structure of the assembly has a first inner spatial frequency correspond to a second inner spatial frequency of an inner sidewall of a second beam structure of the assembly and an outer sidewall of the first beam structure has a first outer spatial frequency correspond to a second outer spatial frequency of an outer sidewall of the second beam structure.
EARLY-IMPACT MOTION LIMITER FOR MEMS DEVICE
This disclosure describes a micromechanical device comprising a first device part and a second device part. One of the first and second device parts is a mobile rotor and the other of the first and second device parts is a fixed stator. The micromechanical device further comprises a motion limiter which extends from the first device part to the second device part. The motion limiter comprises an elongated lever, and the motion limiter is configured to bring a stopper into contact with a counter-structure by rotating the elongated lever.
Piezoelectric anti-stiction structure for microelectromechanical systems
Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.
MEMS DEVICE HAVING A RUGGED PACKAGE AND FABRICATION PROCESS THEREOF
A MEMS device formed by a substrate, having a surface; a MEMS structure arranged on the surface; a first coating region having a first Young's modulus, surrounding the MEMS structure at the top and at the sides and in contact with the surface of the substrate; and a second coating region having a second Young's modulus, surrounding the first coating region at the top and at the sides and in contact with the surface of the substrate. The first Young's modulus is higher than the second Young's modulus.
IMAGING DEVICE
There is provided an imaging device including: an imaging element provided with a photoelectric converter for each pixel, and having a light-receiving surface and a non-light-receiving surface opposed to the light-receiving surface; and an electric element including a support substrate and a floating section, the support substrate provided on side of the non-light-receiving surface of the imaging element and opposed to the imaging element, and the floating section provided between the support substrate and the imaging element, and disposed with a gap interposed between the floating section and each of the support substrate and the imaging element.
Accelerometer Contact Microphones And Methods Thereof
Small form-factor MEMS devices and methods of using the devices. An exemplary MEMS device includes an ACM. Certain devices comprise nanometer scale sensing gaps in the out-of-plane direction to increase vibration sensitivity in a vacuum casing. Certain devices described herein provide a differential sensing mechanism. Accelerometer contact microphones having an operational bandwidth ranging from 0 Hz and 10,000 Hz are also disclosed. The vibration acceleration sensitivity of certain devices described herein is better 100 μg√Hz.
LOW-PARASITIC CAPACITANCE MEMS INERTIAL SENSORS AND RELATED METHODS
Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.