B81B2201/0235

METHOD FOR PRODUCING AN INTEGRATED CIRCUIT POINTED ELEMENT COMPRISING ETCHING FIRST AND SECOND ETCHABLE MATERIALS WITH A PARTICULAR ETCHANT TO FORM AN OPEN CRATER IN A PROJECT

A method for detecting orientation of an integrated circuit is disclosed. The method includes moving, in response to a gravitational force, a mobile metallic piece in an evolution zone of a housing. The housing is formed in an interconnect region of the integrated circuit. The housing includes walls defining the evolution zone. The walls are formed within multiple metallization levels of the interconnect region. The walls include a floor wall and a ceiling wall. At least one of the floor wall and ceiling wall incorporate a pointed element directing its pointed region towards the mobile metallic piece. The pointed element delimits an open crater in a concave part of a projection. The method further includes creating an electrical signal by movement of the mobile metallic piece at a plurality of electrically conducting elements positioned at boundary points of the evolution zone and detecting the electrical signal by a detector.

MEMS INERTIAL SENSOR WITH HIGH RESILIENCE TO THE PHENOMENON OF STICTION

A MEMS inertial sensor includes a supporting structure and an inertial structure. The inertial structure includes at least one inertial mass, an elastic structure, and a stopper structure. The elastic structure is mechanically coupled to the inertial mass and to the supporting structure so as to enable a movement of the inertial mass in a direction parallel to a first direction, when the supporting structure is subjected to an acceleration parallel to the first direction. The stopper structure is fixed with respect to the supporting structure and includes at least one primary stopper element and one secondary stopper element. If the acceleration exceeds a first threshold value, the inertial mass abuts against the primary stopper element and subsequently rotates about an axis of rotation defined by the primary stopper element. If the acceleration exceeds a second threshold value, rotation of the inertial mass terminates when the inertial mass abuts against the secondary stopper element.

Method and system for sensor configuration
11479459 · 2022-10-25 ·

Described herein are methods and systems for controlling a sensor assembly with a plurality of same type sensors. Sensors are operated in active and inactive states and have a corresponding performance parameter and reliability parameter that may be determined. The activation state of at least one of the sensors is changed based on an operational parameter. The performance parameter and/or the reliability parameter can then be updated.

MEMS device, electronic apparatus, and vehicle
11604208 · 2023-03-14 · ·

A MEMS device includes: a substrate as a base including a support portion and a detection electrode as a fixed electrode; a movable body supported to the support portion with a major surface of the movable body facing the fixed electrode; and an abutment portion facing at least a portion of an outer edge of the movable body and restricting rotational displacement in an in-plane direction of the major surface. The abutment portion includes an abutment surface including an abutment position at which the movable body abuts against the abutment portion due to the rotational displacement of the movable body, and a hollow portion provided opposing the abutment surface.

MEMS device with optimized geometry for reducing the offset due to the radiometric effect

A MEMS device with teeter-totter structure includes a mobile mass having an area in a plane and a thickness in a direction perpendicular to the plane. The mobile mass is tiltable about a rotation axis extending parallel to the plane and formed by a first and by a second half-masses arranged on opposite sides of the rotation axis. The first and the second masses have a first and a second centroid, respectively, arranged at a first and a second distance b1, b2, respectively, from the rotation axis. First through openings are formed in the first half-mass and, together with the first half-mass, have a first total perimeter p1 in the plane. Second through openings are formed in the second half-mass and, together with the second half-mass, have a second total perimeter p2 in the plane, where the first and the second perimeters p1, p2 satisfy the equation: p1×b1=p2×b2.

INERTIAL MEASUREMENT UNIT
20230125187 · 2023-04-27 ·

An inertial measurement unit includes: an inertial sensor module having a first inertial sensor and having an outer shape molded with a first resin; a component part; a second resin molding the inertial sensor module and the component part; and a metal provided between the first resin of the inertial sensor module and the second resin.

Temperature dependent calibration of movement detection devices

An electronics system has a board with a thermal interface having an exposed surface. A thermoelectric device is placed against the thermal interface to heat the board. Heat transfers through the board from a first region where the thermal interface is located to a second region where an electronics device is mounted. The electronics device has a temperature sensor that detects the temperature of the electronics device. The temperature of the electronics device is used to calibrate an accelerometer and a gyroscope in the electronics device. Calibration data includes a temperature and a corresponding acceleration offset and a corresponding angle offset. A field computer simultaneously senses a temperature, an acceleration and an angle from the temperature sensor, accelerometer and gyroscope and adjusts the measured data with the offset data at the same temperature. The field computer provides corrected data to a controlled system.

MEMS device manufacturing method and mems device
11597648 · 2023-03-07 · ·

A MEMS device and a MEMS device manufacturing method are provided for suppressing damage to device parts. An exemplary method of manufacturing a resonance device includes radiating laser light from a bottom surface side of a second substrate to form modified regions inside the second substrate along dividing lines of a first substrate, which has device parts formed on a top surface thereof, and the second substrate, the top surface of which is bonded to the bottom surface of the first substrate via bonding portions. The method further includes dividing the first and second substrates along the dividing lines by applying stress to the modified regions. The bonding portions are formed along the dividing lines and block the laser light.

Micro-electromechanical system device including a precision proof mass element and methods for forming the same

A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

Inertia Measurement Device, Vehicle, And Electronic Device
20230120267 · 2023-04-20 ·

An inertia measurement device, which is used in combination with a satellite positioning receiver that outputs a positioning result at every T seconds in a positioning system equipped on a vehicle, when a Z-axis angular velocity sensor, a position error P[m] based on the detection signal of the Z-axis angular velocity sensor while the vehicle moves at a moving speed V[m/sec] for T seconds satisfies Pp ≥ P = (V/Bz) × (1 - cos (Bz×T) ) (where, a bias error of the Z-axis angular velocity sensor is Bz[deg/sec] and a predetermined allowable maximum position error during movement for T seconds is Pp[m]), and a bias error Bx and By of the Y-axis angular velocity sensor satisfies Bz < Bx and Bz < By.