A wafer-level assembly method for a micro hemispherical resonator gyroscope includes: after independently manufactured glass substrates are softened and deformed at a high temperature, forming a micro hemispherical resonator on the glass substrate; forming glass substrate alignment holes at both ends of the glass substrate by laser ablation; aligning and fixing a plurality of identical micro hemispherical resonators on a wafer fixture by using the alignment holes as a reference, and then performing operations by using the wafer fixture as a unit to implement subsequent processes that include: releasing the micro hemispherical resonators, metallizing the surface, fixing to the planar electrode substrates, separating the wafer fixture and cleaning to obtain a micro hemispherical resonator gyroscope driven by a bottom planar electrode substrate. The wafer-level assembly method includes: fixedly mounting the plurality of independently manufactured micro hemispherical resonators on the same wafer fixture to implement a wafer-level installation operation.

An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

A vacuum sealed MEMS and CMOS package and a process for making the same may include a capping wafer having a surface with a plurality of first cavities, a first device having a first surface with a second plurality of second cavities, a hermetic seal between the first surface of the first device and the surface of the capping wafer, and a second device having a first surface bonded to a second surface of the first device. The second device is a CMOS device with conductive through vias connecting the first device to a second surface of the second device, and conductive bumps on the second surface of the second device. Conductive bumps connect to the conductive through vias and wherein a plurality of conductive bumps connect to the second device. The hermetic seal forms a plurality of micro chambers between the capping wafer and the first device.

According to one embodiment, a method of manufacturing a device is provided. A amorphous metal layer is formed. A metal layer containing metal and having a crystal plane oriented to a predetermined plane is formed on the amorphous metal layer. A first layer containing semiconductor including silicon, and metal identical to the metal contained in the metal layer is formed on the metal layer. The first layer is changed to a second layer containing a compound of the semiconductor and the metal, the compound having a crystal plane oriented to the predetermined plane. A third layer containing polycrystalline silicon-germanium and having a crystal plane oriented to the predetermined plane is formed on the second layer.

A microelectromechanical system, including a substrate having a major plane of extension. The microelectromechanical system includes a mass structure. The mass structure is formed to be movable relative to the substrate in a vertical direction, perpendicularly to the major plane of extension. The mass structure includes an electrode structure. The substrate includes a counter-electrode structure. The electrode structure and the counter-electrode structure are coupled capacitively. The mass structure has a deformation in a resting state of the microelectromechanical system. The electrode structure and/or the counter-electrode structure are formed as a function of the deformation of the mass structure.

A method for operating an electronic device comprising a first and second MEMS device and a semiconductor substrate disposed upon a mounting substrate includes subjecting the first MEMS device and the second MEMS device to physical perturbations, wherein the physical perturbations comprise first physical perturbations associated with the first MEMS device and second physical perturbations associated with the second MEMS device, wherein the first physical perturbations and the second physical perturbations are substantially contemporaneous, determining in a plurality of CMOS circuitry formed within the one or more semiconductor substrates, first physical perturbation data from the first MEMS device in response to the first physical perturbations and second physical perturbation data from the second MEMS device in response to the second physical perturbations, determining output data in response to the first physical perturbation data and to the second physical perturbation data, and outputting the output data.

A physical quantity sensor includes: a base substrate; a movable portion; a plurality of movable electrode fingers which are provided in the movable portion; a fixed electrode finger which is provided on the base substrate; and a fixing portion which fixes the movable portion to the base substrate. In the movable electrode fingers, a movable electrode finger which opposes the fixing portion in the first direction is included. A clearance between the movable electrode finger and the fixing portion is smaller than a clearance between the movable electrode finger and the fixed electrode finger. The width of the movable electrode finger is greater than the width of other movable electrode finger.

A vibrating structure gyroscope includes a permanent magnet, a structure arranged in a magnetic field of the permanent magnet and arranged to vibrate under stimulation from at least one primary drive electrode and a drive system that includes: one primary drive electrode arranged at least one primary sense electrode arranged to sense motion in the vibrating structure and a drive control loop controlling the primary drive electrode dependent on the primary sense electrode. The structure also includes a compensation unit arranged to receive a signal from the drive system representative of a gain in the drive control loop and arranged to output a scale factor correction based on that signal. As the magnet degrades (e.g. naturally over time as the material ages), the magnetic field weakens. To compensate for this, the primary drive control loop will automatically increase the gain.

A MEMS type inertial sensor comprising a support structure having at least a first seismic body and a second seismic body connected thereto by resilient means in order to be movable in a suspension plane, transducers for maintaining the seismic bodies in vibration and for determining movements of the seismic bodies in the suspension plane, and a control unit connected to the transducers by electrical conductor means. The transducers comprise at least one electrode secured to the first seismic body and at least one electrode secured to the second seismic body, the two electrodes being arranged to enable relative movements of the seismic bodies relative to each other in the suspension plane to be measured directly.

A method of forming an IC (integrated circuit) device is provided. The method includes receiving a first wafer including a first substrate and including a plasma-reflecting layer disposed on an upper surface thereof. The plasma-reflecting layer is configured to reflect a plasma therefrom. A dielectric protection layer is formed on a lower surface of a second wafer, wherein the second wafer includes a second substrate. The second wafer is bonded to the first wafer, such that a cavity is formed between the plasma-reflecting layer and the dielectric protection layer. An etch process is performed with the plasma to form an opening extending from an upper surface of the second wafer and through the dielectric protection layer into the cavity. A resulting structure of the above method is also provided.