Patent classifications
B81B2201/0242
Method for manufacturing a protective layer against HF etching, semiconductor device provided with the protective layer and method for manufacturing the semiconductor device
A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
METHOD FOR BONDING WAFERS
Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.
Vibration gyroscope
A vibration gyroscope includes: a mass part supported to be displaceable in a first direction and a second direction; an exciter vibrating the mass part in the first direction; and a detector detecting a displacement amount of the mass part in the second direction. The first direction and the second direction are orthogonal to each other. A resonance frequency of the mass part in the first direction coincides with a resonance frequency of the mass part in the second direction. A Q-factor of vibration of the mass part in the second direction is smaller than a Q-factor of vibration of the mass part in the first direction.
Method for checking a sensor value of a MEMS sensor
A method is provided for checking a sensor value of a MEMS sensor. In the process, an output signal of the MEMS sensor is detected and the sensor value is ascertained as a function of the output signal. In addition, frequency components of the output signal are examined and a determination is made as to whether the ascertained sensor value is reliable or unreliable as a function of the examination of the frequency components. If the sensor value is determined to be unreliable, the sensor value is discarded or provided with a lower weighting, or a warning it output relating to the unreliability of the sensor value or an item of information about the unreliability of the sensor value is stored.
DIFFERENTIAL MEMS DEVICE AND METHODS
A MEMS device includes a first MEMS sensor associated with a first spatial plane and a second MEMS sensor is associated with a spatial second plane not co-planar with the first spatial plane, wherein the first MEMS sensor is configured to provide a first interrupt and a first data in response to a physical perturbation, wherein the second MEMS sensor is configured to provide a second interrupt and second data in response to the physical perturbation, and a controller configured to receive the first interrupt at a first time and the second interrupt at a second time different from the first time, wherein the controller is configured to determine a latency between the first time and the second time, and wherein the controller is configured to determine motion data in response to the first data, to the second data, and to the latency.
Semiconductor Package With Built-In Vibration Isolation, Thermal Stability, And Connector Decoupling
A semiconductor package with design features, including an isolation structure for internal components and a flexible electrical connection, that minimizes errors due to environmental temperature, shock, and vibration effects. The semiconductor package may include a base having a first portion surrounded by a second portion. A connector assembly may be attached to the first portion. The connector assembly may extend through an opening in the base. A lid attached may be attached to, at least, the second portion. The attached lid may form a hermetically-sealed cavity defined by an upper surface of the first portion, the connector assembly, and an inner surface of the lid. An elastomer pad may be on the first portion and a sub-assembly may be on the elastomer pad. A flexible electrical connection may be formed between the connector assembly and the sub-assembly.
Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.
Semiconductor device having silicon layer with trench
A semiconductor device includes: a silicon layer in which a trench is disposed; a surface structure portion disposed on the silicon layer at a position distant from the trench and having a surface provided by a metal layer; and a low electric conductivity portion disposed on the surface of the metal layer or in a part of the resist disposed on the trench side of the metal layer, and having an electric conductivity lower than at least a part of the metal layer covering a trench side portion of the surface of the metal layer.
High-temperature solid state resonant gyroscope and drilling measurement system composed thereby
A high-temperature miniaturized resonant gyroscope, which comprises a resonator, a circuit board, a piezoelectric element, a supporting base, a shell and a binding post, wherein the resonator is arranged in the shell and connected with the supporting base, the piezoelectric element is connected with the binding post through a metal conductor, and key process points of internal elements of the gyroscope are fixedly connected by high-temperature materials and high-temperature processes. The gyroscope is a small-sized gyroscope capable of working at a high temperature; the present disclosure also provides an inertial navigation system, which comprises a triaxial gyroscope, a triaxial accelerometer and a damper, wherein the gyroscope is fixedly connected with the damper, and the gyroscope adopts the high-temperature resonant gyroscope. A drilling measurement system and a measurement method.
FORMING A PASSIVATION COATING FOR MEMS DEVICES
In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.