Patent classifications
B81B2201/0242
MICROMACHINED MULTI-AXIS GYROSCOPES WITH REDUCED STRESS SENSITIVITY
In a general aspect, a micromachined gyroscope can include a substrate and a static mass suspended in an x-y plane over the substrate by a plurality of anchors attached to the substrate. The static mass can be attached to the anchors by anchor suspension flexures. The micromachined gyroscope can include a dynamic mass surrounding the static mass and suspended from the static mass by one or more gyroscope suspension flexures.
METHOD FOR MANUFACTURING A MEMS DEVICE BY FIRST HYBRID BONDING A CMOS WAFER TO A MEMS WAFER
A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.
EARLY-IMPACT MOTION LIMITER FOR MEMS DEVICE
This disclosure describes a micromechanical device comprising a first device part and a second device part. One of the first and second device parts is a mobile rotor and the other of the first and second device parts is a fixed stator. The micromechanical device further comprises a motion limiter which extends from the first device part to the second device part. The motion limiter comprises an elongated lever, and the motion limiter is configured to bring a stopper into contact with a counter-structure by rotating the elongated lever.
MEMS device including spurious mode suppression and corresponding operating method
A MEMS device and a corresponding operating method. The MEMS device is equipped with an oscillatory micromechanical system, which is excitable in a plurality of useful modes, the oscillatory micromechanical system including at least one system component, which is excitable in at least one parasitic spurious mode by a superposition of the useful modes. An adjusting device is provided, which is configured in such a way that it counteracts the parasitic spurious mode by application of an electromagnetic interaction to the system component.
Demodulation phase calibration using external input
A MEMS device may output a signal during operation that may include an in-phase component and a quadrature component. An external signal having a phase that corresponds to the quadrature component may be applied to the MEMS device, such that the MEMS device outputs a signal having a modified in-phase component and a modified quadrature component. A phase error for the MEMS device may be determined based on the modified in-phase component and the modified quadrature component.
Piezoelectric anti-stiction structure for microelectromechanical systems
Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.
IMAGING DEVICE
There is provided an imaging device including: an imaging element provided with a photoelectric converter for each pixel, and having a light-receiving surface and a non-light-receiving surface opposed to the light-receiving surface; and an electric element including a support substrate and a floating section, the support substrate provided on side of the non-light-receiving surface of the imaging element and opposed to the imaging element, and the floating section provided between the support substrate and the imaging element, and disposed with a gap interposed between the floating section and each of the support substrate and the imaging element.
SUPPORT STRUCTURE FOR MICRO-VIBRATOR AND METHOD OF MANUFACTURING INERTIAL SENSOR
A support structure for a micro-vibrator includes: a micro-vibrating body having a curved surface portion and a recess recessed from the curved surface portion; and a support member having a rod and an adhesive member arranged at a tip end of the rod. The support member is adhered on a connecting surface of the recess through the adhesive member. The connecting surface of the recess is an internal bottom surface of the recess.
Semiconductor device and method of manufacturing thereof
A method of manufacturing a semiconductor device includes providing a semiconductor layer having a first-type region and a second-type region that are stacked and interface with each other to form a p-n junction, the first-type region defining a first side of the semiconductor layer and the second-type region defining a second side of the semiconductor layer. The method further includes providing an insulating layer on the second side of the semiconductor layer and etching the semiconductor layer from the first side of the semiconductor layer toward the second side of the semiconductor layer to form a trench. The first-type region corresponds to one of a n-type region and a p-type region, and the second-type region corresponds to the other of the n-type region and the p-type region.
SYSTEM, METHOD AND APPARATUS OF A MOTION SENSING STACK WITH A CAMERA SYSTEM
Embodiments of the present disclosure are directed to various systems, methods and apparatuses of a motion sensing stack, comprising a plurality of magnetometers, with a camera. Preferably at least four magnetometers are included and at least one magnetometer is out of the plane of at least three other magnetometers. Preferably, the stack includes an 18D IMU (inertial measurement unit). Preferably, the 18D IMU features a 3D accelerometer, a 3D gyroscope and at least four 3D magnetometers. Alternatively, optionally a 9D IMU is provided, comprising a 3D accelerometer, a 3D gyroscope and one 3D magnetometer. The IMU may optionally be MEMS (microelectromechanical system) based.