An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

The present disclosure is directed to a process for manufacturing a micro-electro-mechanical system (MEMS) device. The process includes, in part, forming a first sacrificial dielectric region on a semiconductor wafer; forming a structural layer of semiconductor material on the first sacrificial dielectric region; forming a plurality of first openings through the structural layer; forming a second sacrificial dielectric region on the structural layer; forming a ceiling layer of semiconductor material on the second sacrificial dielectric region; forming a plurality of second openings through the ceiling layer; forming on the ceiling layer a permeable layer; selectively removing the first and the second sacrificial dielectric regions; and forming on the permeable layer a sealing layer of semiconductor material.

A micro vibration body includes a curved surface portion, which has an annular curved surface, and a recessed portion, which is recessed from the curved surface portion. A mounting substrate includes an inner frame portion and electrode portions, which surround an inner frame portion. A joining member is provided in an inner region of the mounting substrate surrounded by the inner frame portion. The recessed portion of the micro vibration body has a bottom surface defining a mounted surface located in the inner region and joined to the mounting substrate via the joining member. The curved surface portion has a rim that includes an end portion of the curved surface portion on an opposite side to the recessed portion. The rim has a rim lower surface located on a same plane as the mounted surface or a tip end portion of the mounted surface.

A method of fabricating suspended beam silicon carbide microelectromechanical (MEMS) structure with low capacitance and good thermal expansion match. A suspended material structure is attached to an anchor material structure that is direct wafer bonded to a substrate. The anchor material structure and the suspended material structure are formed from either a hexagonal single-crystal SiC material, and the anchor material structure is bonded to the substrate while the suspended material structure does not have to be attached to the substrate. The substrate may be a semi-insulating or insulating SiC substrate. The substrate may have an etched recess region on the substrate first surface to facilitate the formation of the movable suspended material structures. The substrate may have patterned electrical electrodes on the substrate first surface, within recesses etched into the substrate.

A MEMS device may output a signal during operation that may include an in-phase component and a quadrature component. An external signal having a phase that corresponds to the quadrature component may be applied to the MEMS device, such that the MEMS device outputs a signal having a modified in-phase component and a modified quadrature component. A phase error for the MEMS device may be determined based on the modified in-phase component and the modified quadrature component.

A MEMS gyroscope and a method for compensating drift of sensitivity of a MEMS gyroscope are disclosed. The method comprises demodulating an angular rate signal with an in-phase carrier signal for producing a raw rate signal, and obtaining a DC test signal The DC test signal is filtered for obtaining a raw test signal, and zeroing offset of the raw test signal is performed by comparing each sample of the raw test signal to a test signal normalization value for producing an offset zeroed test signal that represents a deviation of the sample of the raw test signal from the test signal normalization value. A sensitivity compensation multiplier is determined based upon the offset zeroed test signal and a predefined gain coefficient, and drift of sensitivity is compensated by multiplying the raw rate signal with the sensitivity compensation multiplier for providing a sensitivity compensated rate signal.

A physical quantity sensor includes, when three directions orthogonal to one another are defined as a first direction, a second direction, and a third direction, a substrate; and a moving member facing the substrate in the third direction via a gap and becoming displaced in the third direction in relation to the substrate. The moving member has a first region that has a plurality of penetration holes penetrating the moving member in the third direction and having a square opening shape as viewed from the third direction, and a second region having no penetration hole. At least one of a length in the first direction and a length in the second direction of the second region is equal to or greater than S0+2×S1, where S0 is a length of one side of the penetration hole, and S1 is a space between the penetration holes next to each other.

A microelectromechanical resonator includes a resonator member suspended over a surface of a substrate by at least one anchor that is connected to the substrate. The resonator member includes outer and inner frames that are concentrically arranged and mechanically coupled by support structures extending therebetween. Related apparatus and gyroscopes are also discussed.

An extensional mode electrostatic microelectromechanical systems (MEMS) gyroscope is described. The MEMS gyroscope operates in an extensional mode. The MEMS gyroscope comprises a vibrating ring structure that is electrostatically excited in the extensional mode.

Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.