B81B2201/025

MEMS Integrated Pressure Sensor Devices and Methods of Forming Same
20180305201 · 2018-10-25 ·

A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.

Micro-electromechanical device comprising a mobile mass that can move out-of-plane

The invention relates to a micro-electromechanical device used as a force sensor, comprising a mobile mass connected to at least one securing zone by means of springs or deformable elements, and means for detecting the movement of the mobile mass, the mobile mass having an outer frame and an inner body, the outer frame and the inner body being connected by at least two flexible portions forming integral decoupling springs on two separate sides of the outer frame.

MICRO-DEVICE HAVING A PLURALITY OF MOBILE ELEMENTS ARRANGED IN A PLURALITY OF EMBEDDED CAVITIES

A micro-device comprising: a substrate, a stationary element rigidly connected to the substrate, a first mobile element suspended from the stationary element by first retention elements and configured to move with respect to the stationary element, a second mobile element suspended from the first mobile element by second retention elements and configured to move with respect to the first mobile element and the stationary element, a first cavity, at least some of the walls of which are formed by the stationary element and in which the first mobile element is encapsulated, a second cavity positioned in the first cavity, at least some of the walls of which are formed by the first mobile element, in which the second mobile element is encapsulated and which is insulated from the first cavity.

Various stress free sensor packages using wafer level supporting die and air gap technique
10041847 · 2018-08-07 · ·

Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.

MEMS ROTATION RATE SENSOR INCLUDING COMBINED DRIVING AND DETECTION
20180209790 · 2018-07-26 ·

A rotation rate sensor including a substrate having a principal plane of extension, and a structure movable with respect to the substrate; the structure being excitable from a neutral position into an oscillation having a movement component substantially parallel to a driving direction, which is substantially parallel to the principal plane of extension. To induce the oscillation, the rotation rate sensor includes a comb electrode moved along with the structure and a comb electrode fixed in position relative to the substrate. The excitation is produced by applying a voltage to the moving comb electrode and/or to the stationary comb electrode. Due to a rotation rate of the rotation rate sensor about an axis running substantially perpendicularly to the driving direction and substantially perpendicularly to the detection direction, a force applied to the structure with a force component along a detection direction substantially perpendicular to the driving direction is detectable.

Micromechanical pressure sensor device including, formed side-by-side in a micromechanical functional layer, first and second micromechanical functional regions that correspond to a pressure sensor and another sensor, and corresponding manufacturing method
10031038 · 2018-07-24 · ·

A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device includes an ASIC wafer, a rewiring system, formed on the front side, which includes a plurality of strip conductor levels and insulating layers situated in between, a structured insulating layer formed above an uppermost strip conductor level, a micromechanical functional layer formed on the insulating layer and which includes a diaphragm area, which may be acted on by pressure, above a recess in the insulating layer as a first pressure detection electrode, and a second pressure detection electrode on the uppermost strip conductor level, formed in the recess at a distance from the diaphragm area and is electrically insulated from the diaphragm area. The diaphragm area is electrically connected to the uppermost strip conductor level by one or multiple first contact plugs which are led through the diaphragm area and through the insulating layer.

OFFSET REJECTION ELECTRODES

A MEMS sensor that comprises a sensing reference plane, at least one anchor coupled to the sensing reference plane, wherein the sensing reference plane is divided by a first and a second axis forming four quadrants on the sensing reference plane, at least one proof mass coupled to the at least one anchor, wherein one of the at least one proof mass moves under an external excitation, and a pattern of sensing elements on the sensing reference plane to detect motion normal of the at least one proof mass relative to the sensing reference plane, wherein the pattern of sensing elements comprises at least three sensing elements in each of the four quadrants.

MEMS integrated pressure sensor devices and methods of forming same

A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.

MICROELECTROMECHANICAL SYSTEM (MEMS) ON APPLICATION SPECIFIC INTEGRATED CIRCUIT (ASIC)

In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

MICRO-ELECTROMECHANICAL DEVICE, SYSTEM AND METHOD FOR ENERGY HARVESTING AND SENSING
20180164241 · 2018-06-14 ·

The present invention discloses, inter alia, a micro-electromechanical device (MEMD) for sensing and for harvesting electrical energy responsive to being subjected to mechanical forces, comprising at least one first conductive element fixedly mounted on a first support, wherein the at least one first conductive element is chargeable with electrons; and at least one second conductive element inertia-mounted on a second support such that the first and second supports are electrically isolated from each other.