A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the element substrate has an element hole-part which the movable element is arranged. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the element hole-part and a gel member. The gel member is formed by hardening of gel which is applied on the annular dam-member.

A method of making a microfluidic device (200, 201, 300) can include depositing a layer of photoresist onto a first substrate (210, 270, 310), selectively removing the photoresist to expose portions of the first substrate (210, 270, 310), etching the exposed portions of the first substrate (210, 270, 310) to form an array of nano-wells (240, 340), coating each nano-well (240, 340) with metal oxide, and coating the metal oxide on each nano-well (240, 340) with a first material to increase binding of DNA, proteins, and polynucleotides to the metal oxide. A layer of a second material can be deposited on interstitial areas between the nano-wells (240, 340) to inhibit binding of DNA, proteins, and polynucleotides to the interstitial areas. A second substrate (220, 320) can be bonded to the first substrate (210, 270, 310) to enclose the array of nano-wells (240, 340) in a cavity.

A micromechanical pressure sensor, having a sensor core formed in a silicon substrate in a pressure-sensitive region, having a sensor membrane, a first cavity being formed in the silicon substrate on the sensor membrane; a second cavity formed between a rear-side surface of the silicon substrate and the sensor core, access holes that go out from the rear-side surface of the silicon substrate being connected to the second cavity; and at least one anchoring recess going out from the rear-side surface being formed in an anchoring region of the silicon substrate surrounding the pressure-sensitive region, the anchoring recess being formed such that a molding compound can flow into the anchoring recess.

A circuit includes: integrated circuit (IC) layers; a cavity formed in at least one of the IC layers; and a micro-acoustic resonator suspended in the cavity by an anchor. The anchor includes: a bridge portion coupled to the micro-acoustic resonator and extending over the cavity; a first acoustic reflector portion adjacent the bridge portion, extending over the cavity, and oriented differently than the bridge portion; and a second acoustic reflector portion adjacent the first acoustic reflector portion, extending over the cavity, and oriented differently than the first acoustic reflector portion.

A method for producing sensor devices includes generating a semiconductor wafer having a plurality of sensor chips, wherein each sensor chip comprises a micro-electromechanical systems (MEMS) structure arranged at a main surface of the semiconductor wafer; forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the MEMS structures and forms a cavity above the corresponding MEMS structure; and singulating the semiconductor wafer into a plurality of sensor devices.

A through silicon interposer wafer and method of manufacturing the same. A through silicon interposer wafer having at least one cavity formed therein for MEMS applications and a method of manufacturing the same are provided. The through silicon interposer wafer includes one or more filled silicon vias formed sufficiently proximate to the at least one cavity to provide support for walls of the at least one cavity during subsequent processing of the interposer wafer.

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

In an assembly between a MEMS and/or NEMS electromechanical component and a casing, the electromechanical component includes at least one suspended and movable structure which is provided with at least one fixing zone, on which a region for receiving the casing is fixed, the suspended structure being at least partially formed in a cover for protecting the component or in a layer which is different from the one in which a sensitive element of the component is formed.

A MEMS package has a MEMS chip, a package substrate, a dammed-seal part. The MEMS chip has an element substrate which a movable element is formed, the element substrate has an element hole-part which the movable element is arranged. The dammed-seal part has an annular dam-member which is formed on the element substrate so as to surround the element hole-part and a gel member. The gel member is formed by hardening of gel which is applied on the annular dam-member.