An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

A MEMS sensor module includes an inner space enclosed by a side wall, a first circuit board, a second circuit board, a dividing wall for dividing the inner space into two cavities, a first MEMS sensor in one cavity wrapped by glue, a second MEMS sensor in another cavity, a first golden finger layer between the side wall and the first circuit board as well as between the dividing wall and the first circuit board for respectively surrounding the two cavities, a second golden finger layer between the side wall and the second circuit board as well as between the dividing wall and the second circuit board for respectively surrounding the two cavities, and a notch in the first golden finger layer at the dividing wall for communicating the two cavities. The MEMS sensor module can avoid the heat generated by one MEMS sensor affecting another one.