An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.

A semiconductor structure includes a first substrate including a cavity extended into the first substrate, a device disposed within the cavity, a first dielectric layer disposed over the first substrate and a first conductive structure surrounded by the first dielectric layer, and a second substrate including a second dielectric layer disposed over the second substrate and a second conductive structure surrounded by the second dielectric layer, wherein the first conductive structure is bonded with the second conductive structure and the first dielectric layer is bonded with the second dielectric layer to seal the cavity.

A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers.

A semiconductive structure includes a first substrate including a first surface and a second surface opposite to the first surface, a second substrate disposed over the first surface and including a first device and a second device, a first capping structure disposed over the second substrate, and including a via extending through the first capping structure to the second device, a first cavity surrounding the first device and defined by the first capping structure and the first substrate, a second cavity surrounding the second device and defined by the first capping structure and the first substrate, and a second capping structure disposed over the first capping structure and covering the via, wherein the second cavity and the via are sealed by the second capping structure.

Sensor packages and methods of assembling sensor packages are provided. A preferred embodiment comprises: a ceramic base comprised of a platform and walls that extend up from the platform around the periphery of the platform to form a cavity; a sensor mounted to the ceramic base; a circuit board mounted down into the cavity wherein the circuit board has a hole through the board that aligns with the sensor such that the sensor is exposed to a top side of the circuit board through the hole; a plurality of electrical connections between the sensor and the circuit board; a plurality of electrical pins mounted to the circuit board and extending up above the walls of the ceramic base; and a cap mounted down into the cavity over the top of the circuit board, the cap including a window that allows the electrical pins to pass through the cap.

A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.

A process for manufacturing an integrated semiconductor device, envisages: forming a MEMS structure; forming an ASIC electronic circuit; and electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.

A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers.

A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.

A box for a microelectronic device includes a first portion and a second portion able to be assembled in order to define, in an assembled position, a housing space for the microelectronic device. A face of the first portion is facing a face of the second portion in the assembled position. The first zones facing the faces form an interface for attaching the first portion and second portion. The second zones face faces forming a cavity for receiving the microelectronic device. At least one among the first portion and the second portion includes at least one element for electrical connection. The first portion and the second portion can apply at least one connection pad of the microelectronic device on the element for connection in the assembled position.